博碩士論文 90521047 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系	zh_TW
DC.creator	石靖節	zh_TW
DC.creator	Ching-Chieh Shih	en_US
dc.date.accessioned	2003-7-16T07:39:07Z
dc.date.available	2003-7-16T07:39:07Z
dc.date.issued	2003
dc.identifier.uri	http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=90521047
dc.contributor.department	電機工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	應變型矽鍺金氧半電晶體之研製 摘 要 本論文中，吾人利用應變型Si/SiGe異質結構製作了平面式n型與p型金氧半電晶體元件，並探討其在不同閘極通道長度(4.7μm ~ 0.6μm)之電性表現。 由直流I-V特性可清楚得知，應變型矽鍺 pMOSFET元件無論在驅動電流、傳導係數 (gm) 及次臨界斜率皆比bulk Si元件有較佳之特性表現外，同時也展現了較佳的短通道特性上如靜態漏電流Ioff (約低1個數量級)、Ion/Ioff及VT roll off等，因此SiGe pMOSFET元件有極大之潛能運用於高速低功率之電路。 然而，應變型矽鍺nMOSFET元件則因inter valley scattering的影響，故無法如P型元件一般展現出較傳統Si nMOSFET元件更佳之驅動電流與元件速度﹔此外因結構設計未最佳化，導致漏電流過大而無法與bulk Si nMOSFET元件比較其次臨界以及短通道特性表現。	zh_TW
dc.description.abstract	The fabrication of Si1-XGeX MOSFET Abstract We have investigated the nMOSFET and pMOSFET with strain Si1-xGex/ Si heterostructure channels formed. The experimental results promise the potential of SiGe heterostructure MOSFET in CMOS application. The incorporation of 20﹪Ge in the channel provides a drive current and transconductor enhancement and manifests advantage of short channel effect in pMOSFET. From measurement result in nMOSFET, the leakage was occurred and we can’t compare subthreshold region characteristic and short channel effects with bulk Si nMOSFET. The bulk Si nMOSFET drive current was better than the strained Si0.8Ge0.2, so it reduced strained Si0.8Ge02 nMOSFET and pMOSFET drive current difference and device structure become more comparable.	en_US
DC.subject	矽鍺	zh_TW
DC.subject	乾蝕刻	zh_TW
DC.subject	SiGe	en_US
DC.subject	dry etch	en_US
DC.title	應變型矽鍺通道金氧半電晶體之研製	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	The fabrication of Si1-xGex MOSFET	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US