博碩士論文 91222024 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	物理學系	zh_TW
DC.creator	曾煥哲	zh_TW
DC.creator	Huan-Che Tseng	en_US
dc.date.accessioned	2004-7-6T07:39:07Z
dc.date.available	2004-7-6T07:39:07Z
dc.date.issued	2004
dc.identifier.uri	http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=91222024
dc.contributor.department	物理學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	本實驗研究以矽化鎢(WSix)於氮化鎵(GaN)之蕭特基接觸特性。利用共同濺鍍法成長矽化鎢薄膜於氮化鎵上。由I-V之量測得到，於未加熱之蕭特基能障大小約為0.5eV。而以RTA及爐管各30秒以及1小時，550、750、950℃熱處理後，發現矽化鎢薄膜可承受至950℃，1小時之處理，能障大小約上升至0.6eV。經由X-ray分析，在950℃溫度時，矽化鎢薄膜形成了四方柱體之結構。而由化學分析電子能譜儀之縱深分析，於950℃熱處理前後，矽化鎢與氮化鎵之界面保持良好。 矽化鎢於有低溫成長氮化鎵覆蓋層(LT-GaN)上，熱處理前後蕭特基能障大小約為1eV。而比較Ni/Au，Cr，Ti金屬於低溫成長氮化鎵覆蓋層上，仍發現其比理論值高，約為1eV。這有可能為低溫成長氮化鎵覆蓋層材料內部缺陷太高導致費米能階被固定住。	zh_TW
dc.description.abstract	The Schottky barrier heights of WSix contact s onto GaN are about 0.54eV,and they exhibited good thermal stability after 750℃ for 1 hour alloying. After 950℃for 1 hour alloying, SBH increases up to 0.65 eV. The Schottky barrier heights of WSix contact s onto LT-GaN are about 1eV,and they exhibited good thermal stability even a one-hour thermal alloying at 950 ℃.The Fermi level of LT-GaN might be pinned at 0.9~1 eV because of hightly defect density in LT-GaN. Compared to conventional Schottky barrier diodes, it was found that we could significantly reduce the leakage current in Schottky barrier diodes by introducing a LT-GaN cap layer on top GaN.	en_US
DC.subject	矽化鎢	zh_TW
DC.subject	半導體	zh_TW
DC.subject	蕭特基	zh_TW
DC.subject	氮化鎵	zh_TW
DC.subject	WSi	en_US
DC.subject	GaN	en_US
DC.subject	tungsten silicide	en_US
DC.subject	schottky	en_US
DC.subject	semiconductor	en_US
DC.title	矽化鎢在n型氮化鎵之蕭特基接觸研究	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Characteristics of WSix Schottky contact on n-GaN	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US