| DC 欄位 |
值 |
語言 |
| DC.contributor | 光電科學與工程學系 | zh_TW |
| DC.creator | 魏志豪 | zh_TW |
| DC.creator | Gui-Hao Wei | en_US |
| dc.date.accessioned | 2004-7-15T07:39:07Z | |
| dc.date.available | 2004-7-15T07:39:07Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=91226010 | |
| dc.contributor.department | 光電科學與工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本實驗的設計是利用電子束蒸鍍系統(E gun)成長二氧化矽薄膜(SiO2 film)並經過高溫熱處理後在薄膜內形成奈米矽聚集，研究此奈米矽聚集的光激發光螢光頻譜(Photoluminescence)特性並將此薄膜應用在氮化鎵(GaN)藍光發光二極體上(LED)。 | zh_TW |
| dc.description.abstract | This experiment is about coating a SiO2 film with GaN LED.
The SiO2 flim have been annealing 1000℃ 20min and 1000℃ 60min。
We can prove that there exits Si nanoclusters in the SiO2 film when after annealing
800℃ 10min。
In the PL analysis,we can find a YL band peak from SiO2 film when after annealing。 | en_US |
| DC.subject | 鍍膜 | zh_TW |
| DC.subject | 二氧化矽 | zh_TW |
| DC.subject | 氮化鎵 | zh_TW |
| DC.subject | 藍光二極體 | zh_TW |
| DC.subject | 奈米矽 | zh_TW |
| DC.subject | Si nanoclusters | en_US |
| DC.subject | sio2 | en_US |
| DC.subject | coating | en_US |
| DC.subject | GaN | en_US |
| DC.subject | LED | en_US |
| DC.title | 奈米矽鍍膜應用於氮化鎵藍光二極體 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | By coating Si nanoclusters embed in SiO2 with GaN LED | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |