| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 林上偉 | zh_TW |
| DC.creator | Shang-Wei Lin | en_US |
| dc.date.accessioned | 2004-7-17T07:39:07Z | |
| dc.date.available | 2004-7-17T07:39:07Z | |
| dc.date.issued | 2004 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=91521034 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文之研究重點，在於發展可應用於矽基材單電子電晶體之量子點(線)的研製。有鑑於其他相關研究單位所發展的量子點製程，大都未考量製程中的穩定性、再現性、成本考量以及與現今半導體製程的相容性；故本論文將重點放在可相容於目前傳統的LSI製程，以及盡量提高製程的穩定性與再現性，並且降低製程的成本，發展出數種在傳統矽基材下可行的量子點(線)製作方式。 | zh_TW |
| dc.description.abstract | In this thesis, the technique of forming Si & Ge quantum dots for Single-electron devices will be proposed. The advantages of the technique are well controllable, reproducible and compatible with traditional CMOS process. | en_US |
| DC.subject | 小線寬間隙壁自我對準技術 | zh_TW |
| DC.subject | 庫倫震盪效應 | zh_TW |
| DC.subject | 庫倫阻斷效應 | zh_TW |
| DC.subject | 矽鍺 | zh_TW |
| DC.subject | 量子點 | zh_TW |
| DC.subject | 單電子電晶體 | zh_TW |
| DC.subject | Single-Electron Transistor(SET) | en_US |
| DC.subject | Quantum dot | en_US |
| DC.subject | Coulomb blockade Effect | en_US |
| DC.subject | Narrow spacer self-alignment(NSSA)) | en_US |
| DC.subject | Coulomb Oscillation Effcet | en_US |
| DC.title | 應用於單電子電晶體之矽/鍺量子點研製 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Study of Forming Si/Ge Quantum dots for Single-Electron Devices | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |