| dc.description.abstract | In order to obtain a reference signal with a low phase noise, high frequency stability, and low cost for the microwave/millimeter-wave applications, the injection-locked oscillators have been widely used in the wireless, optics, and local network systems. In this thesis, the theory of injection locking is introduced to investigate the mechanism about the characteristics of the locking range, high-order harmonic injection, and the phase noise in injection-locked oscillator. With the injection-locked models, the behavior of injection locking is therefore understood for injection-locked oscillator designs.
Based on the methods of fundamental, sub-, and super-harmonic injections, the relative millimeter-wave injection locking circuits have been achieved and fabricated by using CMOS and GaAs pHEMT techniques. The 60 GHz injection-locked oscillators and the 100 GHz injection-locked frequency divider are fulfilled with the good performances of low phase noise, wide locking range, and low power consumption through the simulations with the high-frequency transistor model. In addition, a 30 GHz analogy phase-locked loop using a divided-by 4 ring-type injection-locked frequency divider has also been designed and achieved by using 0.5 μm E/D mode GaAs pHEMT. Utilizing the known experiment results from the each function circuits such as the voltage-controlled oscillator, phase detector, dc amplifier within a loop filter, the 30 GHz PLL was successfully integrated to be a MMIC for Ka-band communication systems. This circuit proves that the injection-locked frequency divider can embedded in the PLL chip with a fine characteristic. | en_US |