| DC 欄位 |
值 |
語言 |
| DC.contributor | 化學工程與材料工程學系 | zh_TW |
| DC.creator | 洪聖宗 | zh_TW |
| DC.creator | Sheng-Jung Hung | en_US |
| dc.date.accessioned | 2006-7-22T07:39:07Z | |
| dc.date.available | 2006-7-22T07:39:07Z | |
| dc.date.issued | 2006 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=93324027 | |
| dc.contributor.department | 化學工程與材料工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在本篇論文有兩個主題，一個是電子術微影鄰近效應的修正，另一個抗反射層的製備。
積體電路發展至今已超過四十年，由演進歷史來看，每2-3年積體電路的集積度增加四倍，這與光學微影發展有密切關聯。但近來光學微影發展面臨到阻礙，如曝光波長及景深的限制。為了克服這些困難，不僅是對如何改善光源波長，同時針對具高解析度能力的電子束微影技術亦被廣泛地探討。電子束直寫微影成為最具有高解析度候選人，被應用到積體電路製造時，具有節省大量光罩費用的優勢。但低產出(throughput)與鄰近效應(proximity effect)控制是其發展上的最大問題。
第一個主題為研究電子束鄰近效應的校正，而研究方法採取實驗分析法來探討鄰近效應。透過適當的數學模型描述電子能量堆積及配合實驗資料的輔助，計算出鄰近效應參數(α、β、η)，並藉由建立一轉移層，先將圖形製作於轉移層上，再轉移至silicon wafer上，減小鄰近效應參數值之後，搭配劑量修正修正以達到準確的圖形設計尺寸。
對所有利用入射光來驅動之半導體元件而言，元件表面之反射率扮演了相當重要的角色，對太陽電池而言亦是如此，因此我們必須利用抗反射層來增加入射光在電池表面的穿透率。
第二個主題研究是探討利用熱交聯性高分子旋塗於晶圓上，以Ar電漿和烘烤改質材料，製備抗反射層，以AFM、SEM觀察其表面形貌探究其反射率大幅下降的原因。 | zh_TW |
| dc.description.abstract | There are two major topics in my research. One is the research of electron-beam lithography proximity effect correction. The other one is anti-reflectance coating.
Integrated circuit (IC) technology has been advanced significantly over the last 40 years. The steady progress is critically dependent on the development of optical lithography. However, optical lithography is now facing a number of challenges for generating extremely fine patterns. In addition to the optical solution, electron beam lithography is one of the promising alternatives for high-resolution patterning. In this thesis, we study and address the proximity effect that is an important issue in e-beam lithography.
The first subject is e-beam lithography proximity effect correction and we introduce the experimental approach to discuss it. By fitting the experimental results base on the double Gaussian model, it gives the α, β and η scattering parameters. We build a transfer layer to transfer the patterns on the silicon wafer, and reduce the proximity effect parameters plus dose correction to give the accurate pattern design.
The reflectance of the surface plays an important role to all semi-conduct devices that drive by incident light as well as solar cell. For this reason, we must use the anti-reflection layer to increase the penetration of the incident light at the cell surface.
The secondary subject is coating polymer on the wafer and then deal with surface by plasma. We use AFM and SEM to see the top view for researching in the reduction of reflection. | en_US |
| DC.subject | 鄰近效應 | zh_TW |
| DC.subject | 電子束微影 | zh_TW |
| DC.subject | 抗反射層 | zh_TW |
| DC.subject | t Anti-reflection Coating | en_US |
| DC.subject | Electron-beam Lithography | en_US |
| DC.subject | Proximity Effec | en_US |
| DC.title | 電子束微影鄰近效應修正與BA-m Benzoxazine film製備抗反射層 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Electron-beam Lithography Proximity Effect Correction and Fabrication of Anti-reflection Coating with BA-m Benzoxazine film | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |