| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 洪梓健 | zh_TW |
| DC.creator | Tzu-Jien Hung | en_US |
| dc.date.accessioned | 2006-7-16T07:39:07Z | |
| dc.date.available | 2006-7-16T07:39:07Z | |
| dc.date.issued | 2006 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=93521081 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 吾人製作出橫向接面紅外光白光二極體，其橫向接面結構由鋅擴散來達成，發光波長由主動層之量子井設計決定，由於橫向P-N接面使得主動層中，所有量子井發光功率可以有相近的能量，以製作出每一個波長強度相同，及極寬的3db頻寬~580nm，吾人由最佳條件550℃-40分鐘鋅擴散，完成一元件且得到光譜半高寬為580nm在驅動電流為60mA，波長從1042nm ~1622nm的發光二極體。 | zh_TW |
| dc.description.abstract | We demonstrate a novel structure of light-emitting-diodes (LEDs) at infrared wavelengths for broadening their optical bandwidth performance. By incorporating the transverse p-n junction with multiple-quantum-wells (MQWs), which have different center wavelengths, the problems of non-uniform carrier distribution in the MQWs of traditional LEDs with vertical p-n junction can be totally eliminated. Tremendous wide 3-dB optical bandwidth (~580nm, 1042nm~1622nm) under 60mA injected current has been demonstrated. | en_US |
| DC.subject | 橫向接面二極體 | zh_TW |
| DC.subject | 鋅擴散 | zh_TW |
| DC.subject | 多重量子井 | zh_TW |
| DC.subject | MQW | en_US |
| DC.subject | zinc diffision | en_US |
| DC.subject | Transverse Junction diode | en_US |
| DC.title | 以磷化銦為基材橫向接面紅外光白光二極體 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | InP Based Transverse Junction Light-Emitting-Diodes for White-LightGeneration at Infrared Wavelengths | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |