| DC 欄位 |
值 |
語言 |
| DC.contributor | 化學工程與材料工程學系 | zh_TW |
| DC.creator | 張家綸 | zh_TW |
| DC.creator | Chia-Lun Chang | en_US |
| dc.date.accessioned | 2007-6-27T07:39:07Z | |
| dc.date.available | 2007-6-27T07:39:07Z | |
| dc.date.issued | 2007 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=943204039 | |
| dc.contributor.department | 化學工程與材料工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 近年來Thin-GaN LED結構的發展已經越來越被受重視，因為以GaN為材料的Thin-GaN LED可以被廣泛運用於各類的照明系統，製作Thin-GaN LED有一個重要的關鍵技術，那就是將原本被磊晶於Sapphire上的GaN薄膜轉移至高散熱性與高導電性的基板上。其中最被廣泛運用的薄膜轉移技術即為晶圓鍵合(wafer bonding)。本研究將低溫晶圓鍵合的技術運用於Thin-GaN LED的整合，利用150 ℃的低溫晶圓鍵合技術將GaN薄膜鍵合至Si晶圓，然後再使用雷射剝離的技術將Sapphire移除，低溫晶圓鍵合技術可以避免因材料之間的CTE (Coefficient of Thermal Expansion) mismatch所衍生出來的問題。 | zh_TW |
| dc.description.abstract | The recent-developed thin-GaN LED structure has been attracted serious attention, which enables GaN-based LED for the lighting applications. To fabricate thin-GaN LED, it requires the transferring technique of the original epi-GaN layer onto better thermal and electrical conduction substrates. The transferring substrate should be attached with GaN epi-layer by wafer bonding. In this research, we will study fabrications of thin GaN LEDs by low-temperature wafer bonding. A low temperature wafer bonding technique need to be developed to bond GaN wafer with Si wafer. (less than 150 °C) The low temperature bonding process avoids the thermal stress problem and enhance the better results after LLO process (Laser Litf-Off). | en_US |
| DC.subject | 二極體 | zh_TW |
| DC.subject | Thin-GaN LED | en_US |
| DC.subject | Wafer bonding | en_US |
| DC.title | 金/銀擴散鍵合研究及其應用在發光二極體 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Fabrication of thin-GaN LED by Ag/Au wafer bonding | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |