| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 陳正雄 | zh_TW |
| DC.creator | Cheng-Hsiung Chen | en_US |
| dc.date.accessioned | 2007-7-13T07:39:07Z | |
| dc.date.available | 2007-7-13T07:39:07Z | |
| dc.date.issued | 2007 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=945201062 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文針對用於短距離光纖通訊綠光波段(520nm)之高速發光二極體研究及製作。我們採用阻障層(barrier)有矽(Si)摻雜及無摻雜之複合結構來製作氮化鎵/氮化銦鎵(GaN/InGaN)多重量子井(MQW)試片，以及使用具有76μm直徑之電流侷限結構。由量測結果發現此結構具有330MHz極佳的電-光(electrical-to-optical) 3-dB頻寬，此調制速度被多重量子井的自發性複合生命時間(spontaneous recombination lifetime)所限制。一個合理的264μW耦光功率也被同時的實現在2mm直徑、0.5數值孔徑(numerical aperture)的塑膠光纖上。 | zh_TW |
| dc.description.abstract | We demonstrate a high-speed GaN based Light-Emitting-Diode (LED) at a wavelength of around 520nm for the application to plastic optical fiber (POF) communication. By using a combination of n-type doping and undoped InxGa1-xN/GaN based multiple-quantum-wells (MQWs), and a 76μm in diameter current-confined aperture structure we can obtain an extremely high electrical-to-optical (E-O) 3-dB bandwidth (~330MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (~185μW) can be simultaneously achieved for a 2mm in diameter POF with a 0.5 numerical aperture (N.A.). | en_US |
| DC.subject | 高速 | zh_TW |
| DC.subject | 發光二極體 | zh_TW |
| DC.subject | LED | en_US |
| DC.subject | light-emissing-diode | en_US |
| DC.subject | high speed | en_US |
| DC.title | 高速可見光發光二極體 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | High speed visible light light-emissing-diode(LED) | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |