| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 顏瑞成 | zh_TW |
| DC.creator | Ruie-Cheng Yan | en_US |
| dc.date.accessioned | 2008-7-10T07:39:07Z | |
| dc.date.available | 2008-7-10T07:39:07Z | |
| dc.date.issued | 2008 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=955201052 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文主要研究內容為氮化鎵基材電晶體(GaN-based Transistors)的製作與量測分析，研究內容分為兩個部分：(1) 平台式氮化鋁鎵/氮化鎵異質接面雙載子電晶體(Mesa-type AlGaN/GaN Heterojunction Bipolar Transistors) (2) 平面式氮化鎵雙載子接面電晶體(Planar-type GaN Bipolar Junction Transistors)。提出以有機金屬化學氣相磊晶系統(Metal-organic Chemical Vapor Deposition, MOCVD)成長於藍寶石(Sapphire)的基板，製作出氮化鎵基材電晶體，並針對元件進行直流量測、分析與討論。
平台式氮化鋁鎵/氮化鎵異質接面雙載子電晶體量測部份主要以室溫直流量測，量測的射極面積為110×110 μm2，電晶體在VBE ＝0.9 V時的電流增益為4.3，崩潰電壓為3 V。另外，由於基極區p型氮化鎵有較低電洞濃度，導致有較差歐姆接觸特性及較大之電阻。為了避免基極區p型氮化鎵乾蝕刻所造成的表面損傷，因此利用離子佈植方式，將高能量矽(Si)離子直接植入晶體中，製造出平面式氮化鎵雙載子接面電晶體，並且探討雙載子接面電晶體的製造技術與元件分析。 | zh_TW |
| dc.description.abstract | This project focused on fabrication of GaN-based transistors and its measurement, which are to be elaborated in two kinds── (1) Mesa-type AlGaN/GaN heterojunction bipolar transistors (HBT), and (2) Planar-type GaN bipolar junction transistors (BJT). The way to the ultimate target, GaN-based transistors, is to epitaxy GaN material on sapphire substrates through metal-organic chemical vapor deposition technology (MOCVD). Detailed analysis and discussion would be made later after the device underwent DC measurement.
The measurement of the mesa-type AlGaN/GaN heterojunction bipolar transistors mainly takes the room temperature DC gauging, with 110×110 μm2 emitter area. The current gain of the transistor in Gummel plot is 4.3 with the VBE ＝0.9 V, the break-down voltage of which is 3 V. Moreover, the lower hole concentration of the base region p-type GaN leads to worse ohmic contact characteristic and a large resistance. Therefore, to avoid the damage caused by the dry etching on the base region p-type GaN, ion implanter is administered. Silicon (Si) ion implanted upon the sample with high energy recipe, bringing out planar-type GaN bipolar junction transistors, the characteristics of which will be discussed later and analyzed in detailed figures. | en_US |
| DC.subject | 離子佈植 | zh_TW |
| DC.subject | 異質接面 | zh_TW |
| DC.subject | 氮化鎵 | zh_TW |
| DC.subject | 電晶體 | zh_TW |
| DC.subject | ion implantation | en_US |
| DC.subject | GaN | en_US |
| DC.subject | transistors | en_US |
| DC.subject | heterojunction | en_US |
| DC.title | 氮化鎵基材電晶體製作與分析 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | GaN-based Transistors Fabrication And Study | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |