| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 黃緯浩 | zh_TW |
| DC.creator | Wei-hao Huang | en_US |
| dc.date.accessioned | 2008-7-1T07:39:07Z | |
| dc.date.available | 2008-7-1T07:39:07Z | |
| dc.date.issued | 2008 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=955201077 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在這篇論文中，我們使用等效電路法(equivalent circuit approach)來研究開發二維異質接面模型之建立。所謂等效電路法就是將半導體元件的柏松方程式、電子連續方程式以及電洞連續方程式轉換成等效電路。我們 先從1D pN 異質接面(hetero-junction)開始研究，建立1D pN異質接面等效電路模型，然後我們參考1D pN異質接面等效電路來建立2D 異質接面雙載子電晶體(HBT)等效電路模型。並且，我們也利用我們開發出來的模型從本質濃度的觀點來探討BJT與HBT的差異性。 | zh_TW |
| dc.description.abstract | In this thesis, we use the equivalent circuit approach to study 2D heterojunction modeling. Poisson’s equation and continuity equation for electron and hole are formulated into a sub-circuit format suitable for general circuit simulator in the equivalent circuit approach. We start to investigate in the one-dimensional pN hetero-junction and we built one-dimensional pN hetero-junction equivalent circuit model. Then, we refer one-dimensional pN hetero-junction equivalent circuit model to built two-dimensional HBT equivalent circuit model. Furthermore, we use the concept of intrinsic carrier concentration to discuss the difference of HBT and BJT. | en_US |
| DC.subject | 異質接面之模型建立及與其在二维半導體元件模擬之應用 | zh_TW |
| DC.subject | Heterojunction Modeling | en_US |
| DC.subject | 2D HBT simulation. | en_US |
| DC.title | 異質接面之模型建立及與其在二维半導體元件模擬之應用 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Heterojunction Modeling and its application in 2D HBT simulation. | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |