博碩士論文 972202018 完整後設資料紀錄

DC 欄位 語言
DC.contributor物理學系zh_TW
DC.creator陳星宏zh_TW
DC.creatorHsing-Hung Chenen_US
dc.date.accessioned2010-6-28T07:39:07Z
dc.date.available2010-6-28T07:39:07Z
dc.date.issued2010
dc.identifier.urihttp://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=972202018
dc.contributor.department物理學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本篇論文利用光激發螢光光譜與光調製反射光譜來分析氧硒化 鋅(ZnSe1-xOx)薄膜樣品的光學特性,氧濃度比例為0≦x≦0.097。在 氧硒化鋅的室溫光激發螢光光譜中,我們觀察到樣品能隙隨氧濃度比 例的增加會劇烈的縮小,此結果可用能帶互斥理論解釋。在變溫光激 發螢光光譜實驗中,我們則觀察到樣品氧濃度比例為0<x≦0.070 之 螢光訊號峰值隨溫度會產生S 型的變化,我們認為這是局域化激子轉 變為自由激子之過程。另外我們利用光調製反射光譜實驗獲得各樣品 能隙。我們利用能帶互斥理論分析光激發螢光光譜以及光調製反射光 譜所得到訊號隨溫度的變化。 zh_TW
dc.description.abstractIn this thesis, we have studied the optical characteristics of ZnSe1-xOx thin film (0≦x≦0.097) by using Photoluminescence (PL)spectroscopy and Photoreflectance (PR) spectroscopy. We observe the band gap decreases dramatically with increasing oxygen concentration by PL at room temperature, which can be explained by the band anticrossing model. We observe the S-shaped PL peaks (0<x≦0.070) evolve with temperature, we have considered this phenomenon which transits from localized exciton to free exciton. We have used PR to obtain the band gap of these samples. We have used the band anticrossing model to analyze these signals from PL and PR. en_US
DC.subject硒化鋅zh_TW
DC.subject氧硒化鋅zh_TW
DC.subjectZnSeen_US
DC.subjectZnSeOen_US
DC.title氧硒化鋅薄膜之光學特性研究zh_TW
dc.language.isozh-TWzh-TW
DC.titleOptical characteristics of ZnSeO thin filmen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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