| DC 欄位 |
值 |
語言 |
| DC.contributor | 光電科學與工程學系 | zh_TW |
| DC.creator | 彭思翔 | zh_TW |
| DC.creator | Ssu-hsiang Peng | en_US |
| dc.date.accessioned | 2010-7-27T07:39:07Z | |
| dc.date.available | 2010-7-27T07:39:07Z | |
| dc.date.issued | 2010 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=972206046 | |
| dc.contributor.department | 光電科學與工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 隨著科技蓬勃發展，光電產品如平面顯示器、半導體元件以及通訊產品，在全球的使用上都有急速成長之趨勢，世界各國亦積極投入大量的人力與財力研發光電相關領域之材料與產品。我國也將光電產業列為新興產業之ㄧ。其中透明導電膜是一種重要的光電材料。透明導電膜既有導電性，又在可見光區具有穿透性，在光電產業中廣泛應用在太陽能電池、液晶顯示器、觸控面板、飛機和汽車的導熱窗玻璃…等領域。目前最常使用的材料為ITO (In2O3:Sn)，但含有稀有元素銦，在地殼中的含量非常稀少，因平面顯示器產業和製作薄膜太陽電池的透明電極之強力需求，導致價格不斷攀升。近年來主要針對不含銦之透明導電膜材料進行研究，發現鈮摻雜於二氧化鈦(TNO)有發展潛力成為新型透明導電膜材料，故本研究對TNO進行鍍製與分析其電特性與光學特性，並利用TNO具有高折射率之特性與AZO堆疊，設計並鍍製高反射率之透明導電膜。本研究成功鍍製出低電阻率之TNO透明導電膜，最佳摻雜鈮的濃度參數在施加功率為20~24 W於鈮靶材上時，鈦與鈮的原子數量比(Ti/Nb)為9~17，光學特性部份：可見光區穿透率約72 %、吸收小於10 %；電特性部分：電阻率約4.6×10-4 Ω-cm、遷移率約1.15 cm2/V-s、載子濃度約1.18×1022 cm-3。TNO與AZO堆疊高反射率之透明導電膜，反射率最高約90 %(中心波長為550 nm)、電阻率為1.88×10-3 Ω-cm。
| zh_TW |
| dc.description.abstract | Transparent conducting oxide (TCO) is a special material. It has the characteristic that like metals it can conduct electricity. Furthermore metal oxides are transparent in the visible light region. Presently, TCO is a key component in solar cells, organic light emitting displays (OLEDs), light emitting displays (LEDs), flat panel displays (FPDs), touch panels, etc. Sn-doped In2O3 (ITO) is a major component of the most widely used TCO, because it has excellent resistivity and transmittance in the visible light region. However, indium is in short supply worldwide, which pushes up the cost. This motivates researchers to develop alternatives to ITO. Furubayashi et al. have recently published results on the development of an In-free TCO material, Nb-doped anatase TiO2 (TNO). The material has development of a novel transparent conductive oxide. In this study, we deposited the Nb-doped TiO2 films, and then investigated the electrical and optical characteristics of the films. We used the high refractive index of characteristic of TNO films with AZO to design and deposit transparent conducting oxide of high reflectance. The low resistivity Nb-doped TiO2 films, the number of atoms of titanium and niobium ratio was from 9 to 17, were deposited when the DC power for the Nb target was from 20 to 24 W, with resistivity of ~4.6×10-4 Ω-cm, mobility of ~1.15 cm2/V-s, and carrier concentrations of ~1.18×1022 cm-3. The films exhibited an average optical transmittance of ~72 % and absorbance <10 % in the visible region. The transparent conducting oxide of high reflectance was deposited by using TNO and AZO. The highest reflectance was 90 % at 550 nm and resistivity was 1.88×10-3 Ω-cm.
| en_US |
| DC.subject | 高反射鏡 | zh_TW |
| DC.subject | 透明導電膜 | zh_TW |
| DC.subject | 鈮摻雜於二氧化鈦 | zh_TW |
| DC.subject | transparent conducting oxide | en_US |
| DC.subject | high reflection mirror | en_US |
| DC.subject | TNO | en_US |
| DC.title | 高折射率TNO透明導電薄膜及其應用於高反射鏡設計之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Research of high refractive index transparent conducting Nb-doped TiO2 (TNO) films and its application on high reflection mirror | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |