博碩士論文 972206066 完整後設資料紀錄

DC 欄位 語言
DC.contributor光電科學與工程學系zh_TW
DC.creator黃新偉zh_TW
DC.creatorHsin-Wei Huangen_US
dc.date.accessioned2010-7-29T07:39:07Z
dc.date.available2010-7-29T07:39:07Z
dc.date.issued2010
dc.identifier.urihttp://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=972206066
dc.contributor.department光電科學與工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract銅銦鎵硒(CIGS)薄膜太陽能電池為最具有量產潛力之一的材料,其效率高達20.1%,在薄膜太陽能電池中最為突出。但是真空製程會有成本過高、不容易大量生產等問題,近來如何在非真空的情況下鍍製CIGS,以降低生產成本成為研究重點之一。 本文利用非真空的方法,並且不同於一般需要在熱退火過程中不間斷地補充Se元素來硒化,更能夠降低整體的生產成本。把Cu2S、In2Se3、Ga與Se混和調製成CIGS前驅物溶液,在大氣下放置自行設計的石墨載具後,使其在快速熱退火中自行有硒化效果,時間僅需3分鐘,即可形成黃銅礦結構的CIGS。 另外,為了取代會有重金屬汙染問題的硫化鎘(CdS),我們利用化學水浴沉積法來鍍製硫化鋅(ZnS)薄膜,接著在已經鍍有CIGS吸收層,基板面積大小為0.8cm2的不銹鋼薄片上沉積ZnS/i-ZnO/ITO,得到效率為3.926%的薄膜太陽能電池。 zh_TW
dc.description.abstractCIGS is the material that has the best potential for the development of thin film solar cells. The 20.1% efficiency for CIGS is the new world record. However, the high vacuum processes needed for production are too expensive and thus not suitable for large scale production. The development of a non-vacuum process is necessary. In this work, we fabricate Cu(In,Ga)(S,Se)2 absorbers layers by a non-vacuum spray process without external selenization, and it took only 3 minutes to reach the chalcopyrite structure in the Rapid Thermal Annealing (RTA). Besides, we strive to replace CdS with ZnS. The Stainless / CIGS/ ZnS/ ZnO/ITO solar cells with efficiency of 3.926 %. en_US
DC.subject硫化鋅zh_TW
DC.subject銅銦鎵硒zh_TW
DC.subject非真空zh_TW
DC.subjectZnSen_US
DC.subjectCIGSen_US
DC.subjectnon-vacuumen_US
DC.title非真空CuInGa(Se,S)2薄膜太陽能電池之研究zh_TW
dc.language.isozh-TWzh-TW
DC.titleA non-vacuum process for CuInGa(Se,S)2 thin film Solar cellsen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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