| DC 欄位 |
值 |
語言 |
| DC.contributor | 化學工程與材料工程學系 | zh_TW |
| DC.creator | 楊鎮宇 | zh_TW |
| DC.creator | Chen-Yu Yang | en_US |
| dc.date.accessioned | 2010-7-28T07:39:07Z | |
| dc.date.available | 2010-7-28T07:39:07Z | |
| dc.date.issued | 2010 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=973204011 | |
| dc.contributor.department | 化學工程與材料工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本研究中分別利用自然滴製法與LB-like法在矽晶及矽鍺基材上製備出大面積排列規則的PS球陣列結構充當模板(Template)，並以此模板製備出不同尺度奈米點陣列，同時針對其界面反應、晶體結構、成長機制、表面性質進行鑑定分析。
在與矽鍺基材反應之實驗方面，我們首度結合自然滴製法與蒸鍍適當厚度比例之Co/a-Si雙薄膜結構，成功地在矽鍺基材上製備出大面積規則排列且尺寸均一之低電阻CoSi2奈米點陣列，有效地降低反應過程中鍺偏析現象發生及提高其熱穩定性。由AFM、TEM與SAED分析結果發現，在400 ℃熱退火處理後Co/a-Si點陣試片會先形成多晶高電阻CoSi相，但經500 ℃-950 ℃之熱退火處理後，點陣會轉化生成多晶低電阻CoSi2相。且由橫截面TEM觀察發現在SiGe晶片上所生成之CoSi2奈米點陣介面十分平整，顯示奈米尺度Co/a-Si有助於CoSi2相生成。而當退火熱處理溫度升高至1000 ℃時，則會發現奈米線結構的產生，由TEM、SAED及EDS分析，可得知此奈米線結構主要是由矽、氧成分所組成之SiO2奈米線，其大小約為15-35 nm且為非晶質結構，並推測其生長為固-液-固(Solid-Liquid-Solid, SLS) 之成長機制。
本研究也首度結合奈米球模板與選擇性化學濕式蝕刻技術，成功在矽晶基材上製備出大小與高度可控制之規則有序矽單晶奈米點陣列結構，並深入探討其性質。經水滴接觸角實驗發現，表面生成矽單晶奈米點陣列之試片其接觸角呈現大幅度增加，可達112°-124°，此種因表面奈米結構造成接觸角提升的現象可用Cassie Model解釋。而在利用紫外光-可見光光譜儀分析中可發現，表面具有奈米點陣列結構的矽晶試片於可見光波長範圍內（400-800 nm）其反射率相較於未經蝕刻反應之矽晶片(33 %)會大幅下降至16 %-22 %，其主要是由於矽單晶奈米點陣提供了入射光額外的散射機制，增加入射光在內部的行徑距離使入射光被吸收的程度提高所致。
| zh_TW |
| dc.description.abstract | The present study has demonstrated that well-ordered arrays of polystyrene(PS) nanosphere were successfully fabricated on (001)Si and (001)Si0.7Ge0.3 substrates by using the drop-coating and LB-like technique. The self-assembled PS nanosphere arrays were used as the deposition templates.
Large-area, well-ordered arrays of low-resistivity CoSi2 nanodots were successfully fabricated on (001)Si0.7Ge0.3 substrate by combining the nanosphere lithography and Co/amorphous-Si bilayer structure. Based on the AFM, TEM and SAED analyse, polycrystalline CoSi nanodots were found to form in sample annealed at 400 ℃.As the annealing temperatures were increased to 500-950 ℃, low-resistivity CoSi2 nanodots were successfully grown on (001)Si0.7Ge0.3 substrate. From cross-sectional TEM observation, the interface between CoSi2 nanodot and (001)Si0.7Ge0.3 substrate was found to be rather smooth. For the Co/a-Si nanodot samples further annealed at 1000 ℃, many SiOx nanowires of 15-35 nm in diameter were observed to grow from the CoSi2 nanodot regions. The growth process of amorphous SiOx nanowires could be explained by the solid–liquid–solid (SLS) mechanism.
By combining the nanosphere template and selective chemical etching, large-area size- and height-tunable Si nanodot arrays were successfully fabricated on (001)Si substrates. From the water contact angle measurements, the surface of HF-treated Si nanodot arrays exhibited strong hydrophobic characteristics. The hydrophobic behavior of Si nanodots could be explained by the Cassie model. The UV-Vis analysis results revealed that the reflectance of Si substrate with Si nanodot arrays was found to decrease from 33 % to 16-22 % in visible light range (400-800 nm). The low visible reflectance of Si nanodots samples is due to the fact that surface of Si nanodots sample is rough, resulting in trapping and scattering of light.
| en_US |
| DC.subject | 奈米點陣列 | zh_TW |
| DC.subject | 矽者基材 | zh_TW |
| DC.subject | 鈷矽化物 | zh_TW |
| DC.subject | 奈米球微影 | zh_TW |
| DC.subject | 選擇性化學蝕刻 | zh_TW |
| DC.subject | nanodot | en_US |
| DC.subject | SiGe substrate | en_US |
| DC.subject | cobalt silicide | en_US |
| DC.subject | nanosphere lithography | en_US |
| DC.subject | elective chemical etching | en_US |
| DC.title | 奈米球微影術製備規則有序排列之低電阻鈷矽化物及矽單晶奈米點陣列之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Fabrication of Well-ordered Arrays of Low-Resistivity CoSi2 nanodots and Single Crystalline Si Nanodots by Nanosphere Lithography. | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |