| DC 欄位 |
值 |
語言 |
| DC.contributor | 能源工程研究所 | zh_TW |
| DC.creator | 徐彥翔 | zh_TW |
| DC.creator | Yan-Shiang Shiu | en_US |
| dc.date.accessioned | 2010-7-15T07:39:07Z | |
| dc.date.available | 2010-7-15T07:39:07Z | |
| dc.date.issued | 2010 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=973208016 | |
| dc.contributor.department | 能源工程研究所 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本研究探討氧化鋅(ZnO)半導體薄膜改變氨水濃度、沉積溫度、
熱處理氣氛及熱處理溫度，對薄膜成形性質、吸收率及光電流的影
響。以化學水浴法沉積法(CBD)於ITO 導電玻璃基材上進行鍍膜，來
製備光電極薄膜。利用光電化學原理於水溶液中吸收太陽能，並將其
解離成氫氣應用於氫能發電系統上。
本實驗探討不同氨水溶液濃度下對生成氧化鋅晶型結構之影
響，並比較在不同的晶型結構下，其晶型結構對穿透光譜及光電流性
質之影響。實驗結果發現，氨水濃度在1M、1.8M時，氧化鋅形成六
角柱型粗短及細長之晶型結構，氨水濃度在1.7M時，氧化鋅形成花
瓣狀之晶形結構。當其氨水濃度提升至10M時，而其氧化鋅半導體光
電特性在無施加偏壓下光電流密度可達到約0.17mA/cm2。進一步改
變沉積溫度、熱處理氣氛及熱處理溫度對薄膜沉積的影響；實驗結果
顯示，沉積溫度90℃、真空氣氛熱處理500℃下，氧化鋅薄膜之成膜
性質及吸收率最佳。
實驗結果亦顯示氧化鋅摻雜鎳後，其能隙值、吸收率及光電特性
的影響；在無施加偏壓下光電流密度約0.2mA/cm2。因此，化學水浴
法製備氧化鋅光電極乃成本低廉且製程簡易之方式。
關鍵字：半導體薄膜、化學水浴沉積法、晶型結構、光電流密度
| zh_TW |
| dc.description.abstract | In this study, zinc oxide (ZnO) thin film are formed under different
working parameters, and their absorption and photocurrent effect are
analyzed. ZnO thin films are deposited on ITO conductive glass substrate
by chemical bath deposition (CBD), which is one of the most promising
technique owing to its large-scale, cost-effective, environmental-benign
and low-temperature advantages. By photoelectrochemical water-splitting,
ZnO thin film can be used to produce H2.
Firstly, different concentrations of ammonia solution are adapted to
form zinc oxide thin film, and the resulting crystal structures are
compared. It shows that ZnO particles have short and long hexagonal
cylinder shapes at [NH3]=1 and1.8. The short hexagonal cylinder shapes
was further transformed to a flower-like structure as ammonia increases
to [NH3]=1.7. Experiments show that the photocurrent density of ZnO
photoelectrode is nearly 0.17 mA/cm2 at 0 bias. The best forming
properties of ZnO film occurs at [NH3]=10.
By doping Ni into ZnO the effects on energy gap, absorption and
photocurrent density of ZnO thin film is investigated. Photocurrent
density of ZnO film is nearly 0.2 mA/cm2 at 0 bias. Therefore, producing
ZnO photoelectrode by chemical bath deposition is proved to be a
low-cost and simple method.
Keyword: Zinc Oxide; crystal structure; photoelectrode;
photoelectrochemical; water-splitting
| en_US |
| DC.subject | 化學水浴沉積法 | zh_TW |
| DC.subject | 半導體薄膜 | zh_TW |
| DC.subject | 光電流密度 | zh_TW |
| DC.subject | 晶型結構 | zh_TW |
| DC.subject | water-splitting | en_US |
| DC.subject | photoelectrochemical | en_US |
| DC.subject | photoelectrode | en_US |
| DC.subject | crystal structure | en_US |
| DC.subject | Zinc Oxide | en_US |
| DC.title | 以化學水浴法製備氧化鋅光電極薄膜之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Production of ZnO Photoelectrode Thin Film by Chemical Bath Deposition Method | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |