| DC 欄位 |
值 |
語言 |
| DC.contributor | 材料科學與工程研究所 | zh_TW |
| DC.creator | 蔡勖升 | zh_TW |
| DC.creator | Hsu-sheng Tsai | en_US |
| dc.date.accessioned | 2010-7-5T07:39:07Z | |
| dc.date.available | 2010-7-5T07:39:07Z | |
| dc.date.issued | 2010 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=973209005 | |
| dc.contributor.department | 材料科學與工程研究所 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 近年來，為了提高元件效能並降低成本，磷化銦等三五族材料與矽基
板整合之相關製程已受到廣泛研究。在異質磊晶製程中，晶格常數的差異
會造成異質介面產生缺陷而影響後續元件性能。智切法為最近新發展之材
料整合技術之一，本研究將其中離子佈植製程以常壓電漿擴散來取代，進
而降低製程成本。以電漿擴散後，將試片在不同溫度下作退火，另外也嘗
試將微波加入退火製程。氫離子濃度之縱深分佈於電漿擴散後在砷化銦鎵
的位置出現平台，而且在300°C 退火或180°C 微波退火後，在P 型磷化銦
與砷化銦鎵介面處聚集相對較多的氫離子，並於部分區域形成氣泡。氫離
子在磷化銦/砷化銦鎵/磷化銦結構中被捕捉的機制牽涉其與摻雜物之交
互作用，異質材料晶格常數差異所造成之應變，以及其與不同之第五族元
素間的庫倫作用力。另一方面，我們以微波退火成功地縮短時間並降低溫
度。本研究證實在智切法中，以常壓電漿擴散取代離子佈植之可行性。
| zh_TW |
| dc.description.abstract | Integration of InP-based materials with Si substrates has been investigated
extensively in order to achieve a high performance and reduce the cost in recent years.
The lattice mismatch leads the defects to appear near the interface between dissimilar
materials during heteroepitaxial growth. We ameliorate one part of the Smart-Cut®
(ion-cut) process, a newly developed technology for integration dissimilar materials,
by using atmospheric pressure plasma diffusion instead of implantation to reduce cost.
After plasma hydrogenation, we annealed the samples at different temperatures in a
furnace and implement a hybrid microwave/conventional annealing. We discovered
that the InGaAs layer significantly terraced the depth profile of hydrogen
concentration. The hydrogen could be trapped relatively more and formed bubbles in
part of the area at the p-InP/i-InGaAs interface after annealing above 300°C or with
microwaves at 180°C. The main mechanisms which caused the trapping of hydrogen
in the InP/InGaAs/InP p-i-n structure involved the interaction of hydrogen and
dopants, the strain induced by the lattice mismatch between InP and InGaAs, and the
difference in the Coulomb interaction of hydrogen and group V elements. On the
other hand, we successfully shortened the time and decreased the temperature by
accompanying microwaves with the annealing processes for layer splitting. Our
investigation made sure of the feasibility of using atmospheric pressure plasma for
hydrogen diffusion instead of implantation in the Smart-Cut® process.
| en_US |
| DC.subject | 常壓電漿 | zh_TW |
| DC.subject | 智切法 | zh_TW |
| DC.subject | 磷化銦 | zh_TW |
| DC.subject | InP | en_US |
| DC.subject | atmospheric pressure plasma | en_US |
| DC.subject | smart cut process | en_US |
| DC.title | 常壓氫電漿擴散在磷化銦智切法上之研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Blistering in InP/InGaAs/InP p-i-n strucrure via hydrogen diffusion by atmospheric pressure plasma for Ion-Cut process | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |