| dc.description.abstract | This paper is based on electron cyclotron resonance chemical vapor deposition (ECR-CVD) to research the characteristics of a-Si:H and initial pin thin-film solar cell. ECR-CVD is a high-density plasma that the plasma generated in the ECR process is via resonant absorption of a microwave by electrons in a magnetic field and gas ionization via subsequent electron-atom collisions. Compared with conventional PECVD, ECR-CVD has several advantages, such as the excellent deposition rates, no electrode contamination, high gas utilization, low energy ion bombardment, and so on. This experiment we explored the film quality by modulation of hydrogen dilution ratio, microwave power, process pressure, total flow rate, Ar flow rate. Measured thin-film and solar cell properties by using Fourier transform infrared spectroscopy, UV-Vis spectrometer, AM1.5 sunlight simulator, Keithley 2400 etc.. Experimental results showed that (1) crystalline phase transition zone in front of the more outstanding film-quality features, (2) microwave power and total flow rate is the main factor affecting the deposition rate, (3) parameter of working pressure is quite important for thin-film quality. Finally, we selected a highest photo response value from intrinsic layer to growth solar cell, the efficiency (η) = 1.03%, open-circuit voltage (VOC) = 0.56 V, short-circuit current density (JSC) = 4.30 A/cm2, fill factor (FF) = 42.6%.
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