| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 宋榮邦 | zh_TW |
| DC.creator | Song Rongbang | en_US |
| dc.date.accessioned | 2011-7-27T07:39:07Z | |
| dc.date.available | 2011-7-27T07:39:07Z | |
| dc.date.issued | 2011 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=985201043 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文在設計上分為兩部份，第一部份是以CMOS製程實現全積體化功率放大器為目標，使用功率結合變壓器技術達到大功率輸出之功率放大器。第二部份則以設計兩個寬頻E類功率放大器為目標，第一個電路為以CMOS製程實現應用電抗補償網路與負電容補償之寬頻E類功率放大器，第二個電路是以pHEMT製程實現應用雙諧振電抗補償網路之寬頻E類功率放大器。
各電路特性量測如下：第一部份以CMOS製程實現功率結合變壓器技術之功率放大器的電路，增益量測為14.3 dB，1-dB增益壓縮點輸出功率為20.2 dBm，飽和輸出功率為25.3 dBm，功率增進效率為24.2 %。而在第二部份，第一個是以CMOS製程實現應用電抗補償網路與負電容補償之寬頻E類功率放大器的電路，經量測結果顯示在1.6 - 3.4 GHz範圍內由小到高為，功率增益為8.9 - 12.5 dB，功率增進效率為14.4 - 33.7 %，1-dB增益壓縮點輸出功率為14.8 - 18.3 dBm，飽和輸出功率為18.4 - 22.5 dBm；第二個是以pHEMT製程實現應用雙諧振電抗補償網路之寬頻E類功率放大器的電路，量測結果顯示在4.5 - 6 GHz範圍內由小到高的結果為，功率增益為9.7 - 13.3 dB，功率增進效率為37.2 - 50.8 %，1-dB增益壓縮點輸出功率為17 - 19.1 dBm，飽和輸出功率為18.5 - 20.8 dBm。
| zh_TW |
| dc.description.abstract | This thesis studies two categories of power amplifiers which are fully integrated silicon-based power amplifiers using power-combing transformer technique and broadband Class-E power amplifiers. Two Class-E amplifiers were studied in this thesis. The first CMOS broadband Class-E power amplifier was designed by using a negative capacitance to compensate the reactance at the output. The second pHEMT broadband Class-E power amplifier was fulfilled by using dual resonant reactance compensation technique.
The measured results are summarized as follow, the CMOS power amplifier using power-combing transformer technique achieves a power gain of 14.3 dB, an output power at 1-dB gain compression point (P1dB) of 20.2 dBm, a saturation output power (Psat) of 25.3 dBm and a power-added efficiency (PAE) of 24.2 %. The CMOS broadband Class-E power amplifier using negative capacitance compensation technique achieves a bandwidth of 1.6 - 3.4 GHz, a power gain of 8.9 to 12.5 dB, a P1dB of 14.8 to 18.3 dBm, a Psat of 18.4 to 22.5 dBm and a PAE of 14.4 to 33.7 %. The pHEMT broadband Class-E power amplifier achieves a bandwidth of 4.5 - 6 GHz, a power gain of 9.7 to 13.3 dB, a P1dB of 17 to 19.1 dBm, a Psat of 18.5 to 20.8 dBm and a PAE of 37.2 to 50.8 %.
| en_US |
| DC.subject | 寬頻 | zh_TW |
| DC.subject | 功率結合變壓器 | zh_TW |
| DC.subject | 功率放大器 | zh_TW |
| DC.subject | Power Amplifier | en_US |
| DC.subject | Power-Combining Transformer | en_US |
| DC.subject | Broadband | en_US |
| DC.title | 應用功率結合變壓器技術於功率放大器暨寬頻E類功率放大器之研製 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | The Implementations on Power Amplifier Using Power-Combining Transformer Techniqueand Broadband Class E Power Amplifiers | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |