博碩士論文 985201070 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系	zh_TW
DC.creator	張瑞男	zh_TW
DC.creator	Ruei-nan Chang	en_US
dc.date.accessioned	2011-7-5T07:39:07Z
dc.date.available	2011-7-5T07:39:07Z
dc.date.issued	2011
dc.identifier.uri	http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=985201070
dc.contributor.department	電機工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	本篇論文中，我們藉由加入離子碰撞游離模型於二維元件模型內，來模擬半導體元件內部載子發生雪崩崩潰之現象。首先，我們探討兩種不同結構，第一種為簡單的 pn 接面二極體，藉此元件來探討不同濃度下載子的傳輸現象，並且進行一系列的 pn 二極體模擬。另一種為中間夾一層未摻雜的本質半導體之 pin 二極體，利用此結構來萃取矽材料在高電場下的電子和電洞的碰撞游離係數，和原始設定值作比較後再加分析並找出造成兩者數據差異的原因，最後再利用先前萃取出之電子碰撞游離係數使用兩組模型相互對照的方法來萃取電洞碰撞游離係數。	zh_TW
dc.description.abstract	In this thesis, we design a 2-D device simulator which includes the impact ionization model to simulate the avalanche breakdown. At first, we discuss two device structures. One is simple p-n junction diode. We use it to discuss the transmission of carriers for different doping concentration, and to proceed a series of simulation for p-n junction diodes. Another is p-i-n diode with an undoped intrinsic semiconductor layer in the middle, and we use this structure to extract the electron and hole impact-ionization rate for Si in high electric field. Then we compare it with the original theoretical value to analyze and find out the reasons which make different results. Finally, we extract the hole impact ionization rate based on the electron impact ionization rate obtained in the previous simulation.	en_US
DC.subject	碰撞游離係數	zh_TW
DC.subject	pin 二極體	zh_TW
DC.subject	impact ionization rate	en_US
DC.subject	p-i-n diode	en_US
DC.title	二維PIN碰撞游離模型之參數萃取	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Parameter Extraction of Impact Ionization Rate in Two-Dimensional PIN Diode Simulation	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US