博碩士論文 985301004 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系在職專班	zh_TW
DC.creator	白佳宏	zh_TW
DC.creator	Chia-hung Pai	en_US
dc.date.accessioned	2011-7-5T07:39:07Z
dc.date.available	2011-7-5T07:39:07Z
dc.date.issued	2011
dc.identifier.uri	http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=985301004
dc.contributor.department	電機工程學系在職專班	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	本篇論文中，我們藉由加入離子衝撞游離模型於三維元件模擬器內，來模擬半導體元件內部載子雪崩崩潰之現象。首先我們利用Poisson’s equation 和電子與電洞的連續性方程式，模擬三維半導體元件的載子產生與復合特性。接著我們再討論整體三維模擬器的程式流程還有帶寬(BW)的原理。再者為了實現三維模擬器讓時間更有效率，敘述如何選擇整體參數設定，緊接著討論三維在二維上的驗證。最後再顯示出三維模擬器的崩潰結果。確定無誤後，接著我們繼續探討不同擴散半徑對於崩潰電壓的影響。	zh_TW
dc.description.abstract	In this thesis, we design a 3-D device simulator which includes the impact-ionization model to simulate the breakdown phenomenon of avalanche. First, we use Poisson’s equation, electron continuity equation and hole continuity equation to simulate 3-D device recombination rate and generation rate, and then we discuss the theorems, which include 3-D device simulator program flow chart and Band-Width property. In order to optimize efficiency in 3-D device simulation, we describe how to choose simulation parameters. After that, we discuss to prove 3-D device on 2-D stage. Finally, show the breakdown result of 3-D device simulator. After confirmation, we discuss the breakdown voltage effect on different diffusion radii.	en_US
DC.subject	三維元件模擬器	zh_TW
DC.subject	帶寬的原理	zh_TW
DC.subject	雪崩崩潰	zh_TW
DC.subject	Band-Width property	en_US
DC.subject	breakdown phenomenon	en_US
DC.subject	3-D device simulator	en_US
DC.title	三維撞擊游離模型之開發與其在球PN接面崩潰模擬之應用	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Development of 3D impact-ionization model and its applications to breakdown simulation of spherical PN junction.	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US