| DC 欄位 |
值 |
語言 |
| DC.contributor | 物理學系 | zh_TW |
| DC.creator | 闕壯翰 | zh_TW |
| DC.creator | Juang-Han Chiue | en_US |
| dc.date.accessioned | 2013-8-29T07:39:07Z | |
| dc.date.available | 2013-8-29T07:39:07Z | |
| dc.date.issued | 2013 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=992202002 | |
| dc.contributor.department | 物理學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 脈衝雷射沉積(pulsed laser deposition，PLD)是一種簡單並且通用於成長各式各樣薄膜的技術。PLD利用一道高功率雷射透過透鏡將齊聚焦在靶材上，將其靶材加熱至汽化而形成電漿蕈狀團(plasma plume)沉積在基板上形成薄膜。透過先前的文獻，具我們所知將PLD此技術應用在成長類鑽石薄膜已非常常見，但目前為止
成長出來的類鑽石薄膜則都面臨到由於沉積時碳薄膜中所產生的極大內在應力(大約10 GPa)使得薄膜厚度無法超過0.1 μm到0.2 μm之問題。也由於此應力我們可以如過去文獻在碳薄膜表面上觀察到各式各樣表面釋放應力的結構。也透過過去的文獻，我們發現目前PLD技術無法成長出鑽石結構之薄膜，我們所看到皆是無晶向之結構的碳薄膜。
本論文所發展的技術則在PLD的原始架構中加入另外一道脈衝雷射來進行基板薄膜加熱，我們嘗試在此新的PLD架構下能夠對我們上述所提及的兩個問題來做控制。希望能夠利用加熱基板沉積的薄膜能又有效對碳薄膜中應力進行釋放，並且能夠利用此加熱作用之脈衝雷射來控制碳薄膜晶向。
透過實驗結果我們發現可以利用加熱碳薄膜來釋放薄膜中極大應力，使得薄膜能夠不產生表面釋放應力之結構，能夠成長成表面均勻薄膜。但透過拉曼光譜所提供的訊息，觀察到我們似乎已對其使用脈衝雷射加熱的部分進行晶向上之改變，使得較多的sp3鍵結轉變為sp2鍵結，故實驗結果顯示，目前本論文所使用的加熱之脈衝雷射能量，無法得到在不改變鍵結比例下也能釋放碳薄膜之應力的能力。
在利用另一道加熱的脈衝雷射在碳薄膜上，由本論文所討論的結果顯示，可以定性的歸納出當加熱之脈衝雷射由能量較低到較高(即薄膜加熱的溫度愈高)，從拉曼光譜上可以明顯看出碳薄膜G band強度越來越低，且D band(1340cm^1)強度越來越強且峰直之半高全寬(FWHM)漸漸縮減。目前由實驗結果可以推論薄膜由原本較多之sp3鍵結轉換成幾乎全部都為sp2之碳薄膜。 | zh_TW |
| dc.description.abstract | Pulsed laser deposition(PLD) is a simple and eazily- lm-growing technology. With a high-power laser focused on the target by lens, PLD can vapor the surface of the target to form the plasma plume.The plumed plasma nally deposite on the substrate to form lms.As we know by the prevous papers, growing diamond-like lms with PLD is commom. However, due to the internal stress (about 10 GPa)during the growth of carbon- lm deposition, the diamond-like films grown by far could no exceed 0.1um. As we know, no one has grown
the dimond-like films structures with PLD by far. All we saw were amorphous carbon fi lms.
We developed the new PLD technology which is apply another
pulse laser to heat the fi lms on the substrate in this thesis, we try to achieve two problems we have talked above.
It can eliminate the stress relief patterns by using another control beam because the control beam decreases the sp3 ratio of the diamond-like carbon fi lms so that increases the adhesion of the films, so it seems that we can’t eliminate the stress relief patterns without not change the sp3 ratio.
We obtain the peak representing the crystallinity of carbon films near the diamond peak at 1332 cm^1 by using another control beam,but some of the carbon fi lms are ablated by control beam. | en_US |
| DC.subject | 脈衝雷射沉積 | zh_TW |
| DC.subject | 碳薄膜 | zh_TW |
| DC.subject | 類鑽石薄膜 | zh_TW |
| DC.subject | 應力 | zh_TW |
| DC.subject | 鑽石薄膜 | zh_TW |
| DC.subject | 拉曼光譜 | zh_TW |
| DC.subject | Pulsed laser deposition | en_US |
| DC.subject | Carbon films | en_US |
| DC.subject | Diamond-like carbon films | en_US |
| DC.subject | compressive stress | en_US |
| DC.subject | Diamond films | en_US |
| DC.subject | Raman spectroscopy | en_US |
| DC.title | 發展利用另一道脈衝雷射在脈衝雷射沉 積技術中成長碳薄膜的雷射同步過程進 行碳薄膜晶向之控制 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Control of the crystallinity of carbon films grown with pulsed laser deposition by using another laser pulse for synchronous laser processing | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |