博碩士論文 992206038 完整後設資料紀錄

DC 欄位 語言
DC.contributor光電科學與工程學系zh_TW
DC.creator鄭鈺潔zh_TW
DC.creatorYu-Chieh Chengen_US
dc.date.accessioned2011-7-25T07:39:07Z
dc.date.available2011-7-25T07:39:07Z
dc.date.issued2011
dc.identifier.urihttp://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=992206038
dc.contributor.department光電科學與工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本論文選擇在氮化鎵材料製作二維漸進式週期光子晶體共振腔,使光有效侷限於其中。以平面波展開法(Plane Wave Expansion, PWE) 與有限時域差分法(Finite-Difference-Time-Domain, FDTD)來分析漸進式週期光子晶體共振腔之特性,計算出結構參數,也以光侷限之方法來分析共振腔在垂直方向上的損耗,以及解釋為何高階模態會有較高的Q值。在室溫下架設微光激發光系統(Micro-Photoluminescence,???PL),量測結果發現,當激發光源功率大於0.9 mW時,成功量得於波長於?=362 nm 之雷射訊號,以高斯擬合得到半高寬為0.04 nm,換算 Q值為1×104。 zh_TW
dc.description.abstractIn this study, the photonic crystals nanocavity has been designed, fabricated, and characterized in GaN bulk materials with the heterostructure which could achieve extremely high-Q factors. The device characterization was performed at room temperature using a micro-photoluminescence system. We obtain a lasing signal whose full width at half maximum (FWHM) obtained by Gaussian curve fitting is ??=0.04 nm for ?=362 nm and the threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 17 kmW/cm2. The Q-factor of the cavity is as high as 104. en_US
DC.subject共振腔zh_TW
DC.subject光子晶體zh_TW
DC.subjectcavitiesen_US
DC.subjectPhotonic crystalsen_US
DC.title漸進式週期光子晶體共振腔之研究zh_TW
dc.language.isozh-TWzh-TW
DC.titleStudy of Graded Photonic Crystal Cavitiesen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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