| dc.description.abstract | Most of the development trend of electronic products has always been to achieve high performance and multi-function by consuming more power. In the energy industry equipment used by semiconductor, power semiconductors, the proportion of over 50%. Power semiconductors are widely used in the fields of home appliances, computers, automotive and railway. Since these applications are expected to expand the popularity of the use of power semiconductors has risen, the power semiconductor market will expand year by year growth.
With crude oil prices rising year by year, the timing of the development of energy-saving products and energy products in the world is becoming increasingly mature, full propulsion of electric vehicles to replace petrol cars. In power semiconductors, IGBT market scale expanding background is an increase in demand for hybrid and electric cars. Recently, car manufacturers competing yield hybrid plan, and intends to replace the original car’’s gasoline hybrid in one fell swoop. Thus more visible IGBT there is enormous potential in the future market development.
In recent years, because semiconductor components were integrated and the IGBT modules which paralleled diode were used in circuit applications, Reverse Conducting- IGBT that could combine the IGBT and Diode structure were developed, in order to save the circuit from additional parts. In this paper, I will use the Thin Wafer technology and Field-Sop structure to design 600V RC-IGBT. In addition, I will do a series of research and discussion for how to achieve low on-state voltage, high breakdown voltage and improve the reverse recovery characteristics of RC-IGBT, designing to optimize RC-IGBT.
Through the Silvaco software ATHENA and ATLAS simulate component process method and conduct electrical analysis and design, showed the RC-IGBT that has Carried Stored N layer can reach more than 600 V withstand voltage. Compared with the RC-IGBT without Carried Stored N layer , it can effectively improve the on-state voltage about 13% and improve built-in diode reverse recovery performance, that the reverse peak current decreased approximately 0.4A and the reverse recovery charge can reduce more than 17%.
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