| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 陳俊明 | zh_TW |
| DC.creator | Chun-ming Chen | en_US |
| dc.date.accessioned | 2013-1-21T07:39:07Z | |
| dc.date.available | 2013-1-21T07:39:07Z | |
| dc.date.issued | 2013 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:444/thesis/view_etd.asp?URN=995201123 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 為了將異質接面雙極性電晶體操作頻率提升至兆赫(THz)等級，則必須
將元件尺寸微縮至次微米等級，以降低元件的RC 延遲時間，來達到THz
電晶體的目標。本論文主要為討論在元件的微縮過程中 ，將遭遇到的製程
瓶頸及解決方法。
我們透過電子束微影技術並利用多層光阻組合結構，成功的將射極金
屬線寬微縮至150 奈米，並將射極金屬的外觀形貌由長方體輪廓改為上寬
下窄的T 形輪廓以提高基極金屬自我對準的製程良率，且提出一製作射極
金屬側壁的製程，能避免次微米元件在濕蝕刻製程時容易遇到的電化學效
應發生，使元件在蝕刻至基極材料表面時，射極平台周圍不會殘留多餘的
射極材料，導致射極定義線寬失真。除此之外，我們還發展了一套利用苯
並環丁烯(BCB)材料，以旋轉塗佈加上回蝕刻的方式，來完成的自我對準基
極平台定義製程，相對於利用成長二氧化矽或氮化矽來完成的基極平台定
義製程，能避免因利用電漿成長薄膜時所造成的元件增益衰退現象，且更
能有效保護射極平台及射極平台與基極金屬間的基極材料表面，使元件能
在不傷害特性的條件下以濕蝕刻的方式蝕刻至次集極材料表面。
因此，本論文的結果將有助於未來次微米異質接面雙極性電晶體的元
件製作，使元件能順利達到THz 之目標。 | zh_TW |
| dc.description.abstract | To achieve terahertz operation, the emitter size of heterojunction bipolar
transistors (HBTs) must be scaled down to sub-micron meter to minimize the
RC delay time. In this work, we focus on solving the bottleneck of fabricating
sub-micron meter HBTs.
By using e-beam lithography technology and multi-layer photoresist
process, an emitter metal with minimum linewidth of 0.15 μm has been
demonstrated. Moreover, a unique T-shape emitter is proposed to improve the
yield of self-aligned base metallization process. We have also developed a SiO2
dielectric sidewall process to avoid the electrical-chemical effect during the
emitter mesa etching while maintain the effective emitter linewidth. Base on the
SiO2 sidewall technology, we propose a novel self-aligned base mesa process
using spin-coated Benzocyclobutene (BCB). The use of spin-coated BCB can
avoid the ion bombard problem during the plasma etching process and leads to a
low damage surface of the device under process. Electrical measurements show
that the cross point of the base and collector currents in the Gummel plot can be
suppressed for 2 to 3 orders of magnitude, which indicate that the technology
developed in this work will greatly benefit the realization of THz HBTs. | en_US |
| DC.subject | 次微米 | zh_TW |
| DC.subject | 異質接面雙極性電晶體 | zh_TW |
| DC.title | 次微米磷化銦/砷化銦鎵異質接面雙極性電晶體自我對準基極平台開發 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |