非晶矽薄膜製程於電子迴旋共振氣相沉積之電漿診斷研究

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王芊茹(Chian-Ju Wang) 查詢紙本館藏

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光機電工程研究所

論文名稱

非晶矽薄膜製程於電子迴旋共振氣相沉積之電漿診斷研究
(Plasma diagnostics study of hydrogenated amorphous silicon thin film process by electron cyclotron resonance chemical vapor deposition)

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摘要(中)

本研究使用光放射光譜儀(OES)監測電漿物種變化，蘭牟爾探針(Langmuir probe)監測電漿特性，四極柱質譜儀(QMS)監測物種濃度，於電子迴旋共振化學氣相沉積製備非晶矽薄膜之製程。調變的參數為微波功率、壓力、磁場共振位置、氫稀釋濃度比並輔以FTIR、Detek來探討薄膜的結構特性，以少數載子生命週期和微結構因子判斷薄膜品質的好壞。最後將電漿特性與薄膜特性相互比較，以期建構電漿診斷平台。
經由實驗可得，考慮到電子密度及電子溫度的影響因此製程壓力選用5mTorr最為恰當；至於功率可選用低功率500W；綜合以上參數，可於磁場組態40/12/22、氫稀釋比0.2、厚度20nm下獲得品質穩定的非晶矽鈍化薄膜。
本研究成功整合了OES、Langmuir probe、QMS，將SiH4消耗量、表面懸吊鍵數量作為預測薄膜沉積速率指標，使用SiH2/SiH3為薄膜品質之指標並將Si*/SiH*作為電子溫度指標。最後，以沉積非晶矽薄膜為例，解析ECR電漿沉膜機制。並可利用此結論，在尚未成長薄膜前，就先行營造出有利成長良好特性的薄膜生長環境，藉此減少製程之試誤時間。

摘要(英)

In this study, OES (Optical emission spectrometer), Langmuir probe, and QMS (Quadrupole mass spectrometer) were utilized as plasma diagnostics tools and a-Si:H (Hydrogenated amorphous silicon ) thin film was deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). QMS and OES were used to identify active species in the plasma. Electron density, electron temperature and the energy of ion bombardment were obtained by Langmuir probe. The film quality such as microstructure fraction (R*), hydrogen content (CH), deposition rate, and lifetime were investigated by FT-IR and Detak. The relationship between the film quality and plasma characteristics with varying process parameters (microwave power, working pressure, magnetic field resonance position, and dilution ratio) was discussed.
The result showed that high microwave power and high hydrogen flow rate injected would lead to higher electron temperature and more SiH2 generated in the plasma. Higher process pressure caused lower electron density and lower electron temperature. Therefore thin film with a low defect would be deposited by dilution ratio of 0.2, microwave power of 500W, working pressure of 5mTorr and the magnetic field configuration of 40A, 12A and 22A represented main coil, inner coil and outer coil current respectively.
Consequently, we successfully demonstrate the mechanism of plasma in a-Si:H process and have some findings in which the consumption of SiH4 and the amount of dangling bond on the surface could be regarded as an indicator of deposition rate in a-Si:H process and the ratio of SiH2 to SiH3 from QMS could be considered as an indicator of film quality for microstructure fraction (R*) in films. Si*/SiH* from OES could be treated as an indicator for electron temperature in transport.

關鍵字(中)

★ 電漿診斷
★ 氫化非晶矽薄膜
★ 四極柱質譜儀
★ 光放射光譜儀
★ 蘭牟爾探針

關鍵字(英)

★ Plasma diagnostics
★ hydrogenated amorphous silicon
★ QMS
★ OES
★ Langmuir probe

論文目次

摘要 i
Abstract ii
誌謝 iv
目錄 v
圖目錄 viii
表目錄 xi
一、緒論 1
1-1 前言 1
1-2 研究動機及目的 3
二、文獻整理與基本回顧 4
2-1 電漿簡介 4
2-1-1 電漿原理 4
2-1-2 電漿特性 7
2-1-3 電子迴旋共振電漿 8
2-3 薄膜沉積 10
2-3-1 薄膜沉積原理 10
2-3-2 化學氣相沉積(CVD) 12
2-3 氫化非晶矽薄膜(α-Si:H) 14
2-4 電漿診斷系統 18
2-4-1 光放射光譜儀 18
2-4-2 蘭牟爾探針 19
2-4-3 四極柱質譜儀(QMS) 19
三、實驗方法與設備 22
3-1 實驗流程 22
3-2 實驗步驟 23
3-2-1 參數設定 23
3-2-2 實驗流程 24
3-3 實驗設備及原理 25
3-3-1 電子迴旋共振氣相沉積系統(ECR-CVD) 25
3-3-2 光放射光譜儀OES 28
3-3-3 Langmuir probe 30
3-3-4 四極柱質譜儀 32
3-3-5 傅氏轉換紅外線光譜儀(FTIR) 33
3-3-6 表面輪廓儀(Detek) 35
四、結果與討論 37
4-1 功率 39
4-1-1 功率對沉積速率的影響 39
4-1-2 功率對電子密度與溫度的影響 40
4-1-3 功率對薄膜品質的影響 41
4-2 工作壓力 43
4-2-1 工作壓力對沉積速率的影響 43
4-2-2 工作壓力對電子密度與溫度的影響 44
4-2-3 工作壓力對薄膜品質的影響 47
4-3 磁場共振位置 49
4-3-1 磁場共振位置對沉積速率的影響 50
4-3-2 磁場共振位置對電子密度與溫度的影響 51
4-3-3 磁場共振位置對薄膜品質的影響 54
4-4 氫稀釋比 55
4-4-1氫稀釋比對沉積速率的影響 55
4-4-2 氫稀釋比對電子密度與溫度的影響 56
4-4-3 氫稀釋比對薄膜品質的影響 59
五、結論 60
參考文獻 61

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指導教授

利定東(Tomi T. Li)

審核日期

2013-9-25

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