摘要(英) |
In this study, ECR-CVD was used for the deposition of high doping silicon thin films and passivation layers, PE-CVD was used for the deposition of passivation layers. These thin films were deposited on single-crystalline silicon substrate to fabricate the homo-junction and hetero-junction c-Si solar cells. The electrical properties and solar cell performance of homo-junction and hetero-junction c-Si solar cells were investigated. ECR-CVD has advantages about high deposition rate, low working pressure, low ion bombardment and no electrode pollution. But high deposition rate makes the thin films more defects and loose structure, these feature are not good for passivation layers in HIT solar cells. Therefore, the better quality passivation layers were deposited by PE-CVD to improve the HIT solar cells.
In the first part, we will modulate the experimental parameters of doping concentration of BSF, oxygen content of emitter, single-crystalline silicon substrate types, and the electrode in homo-junction solar cells to investigate the electrical properties and conversion efficiency. The emitter and back surface field layers of homo-junction solar cell were deposited by ECR-CVD. The characteristics of homo-junction solar cell with screen printing electrode on p-type planar substrate were shown as follow: VOC = 0.616 V, JSC = 37.397 mA/cm2, F.F. = 75 %, efficiency = 17.29 % in the area of 1 cm2.
In second part, the passivation quality on different wafer and the variation of the passivation layer thickness were performed in hetero-junction solar cells. The passivation layer were deposited by ECR-CVD or PE-CVD, the emitter and back surface field layers were deposited by ECR-CVD. In addition, the characteristics of hetero-junction solar cell on p-type planar substrate with 3 nm passivation layer deposited by PE-CVD that were shown as follow: VOC = 0.644 V, JSC = 34.04 mA/cm2, F.F. = 68 %, efficiency = 14.8 % in the area of 1 cm2.
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