有機/氮化鎵混合發光二極體的發光機制與效率

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姓名

廖清翰(Ching-Han Liao) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

有機/氮化鎵混合發光二極體的發光機制與效率
(Emission Mechanism and Efficiency of F8T2/GaN LED)

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摘要(中)

此研究將有機F8T2塗佈於無機氮化鎵發光二極體製作出白光F8T2/氮化鎵發光二極體，其中，白光是由氮化鎵發光二極體發出的藍光與F8T2層發出的黃光所組成。有別於一般有機/無機發光二極體的發光機制， F8T2層所發出的黃光是由光致發光與電致發光所組成，其中，電致發光所產生的黃光佔總體黃光的83%以上。由於此結構包含兩個發光區MQWs與F8T2層，也包含兩個能障：於p-GaN與MQWs之間的電子阻擋層、於F8T2層與p-GaN之間的界面層障，分別阻止電子進入F8T2層發光區與阻止電洞進入MQWs發光區，隨著電流的上升，有較高比例的載子可以克服能障進入發光區，黃光與藍光的外部效率皆隨著電流上升而上升，所以F8T2/GaN LED的外部效率會隨著電流上升而上升。F8T2層的加入不但可做為發光元件的發光層，F8T2層與p-GaN的界面層障可以控制載子的傳輸，以穩定元件於不同操作電流下不同波段的發光比例，使F8T2/GaN LED發光元件不會有明顯的色偏差。

摘要(英)

The white light F8T2/GaN LED is produced by the hybridization of the blue light of GaN LED and the yellow/green light of the F8T2 layer. The emission mechanism of the F8T2 layer of F8T2/GaN LED is different from the emission mechanism of the organic layer of general organic/inorganic LED. The most part of luminescence of the F8T2 layer is electroluminescence which is up to 83% of whole luminescence. Since F8T2/GaN LED has an EBL between p-GaN and MQWs and a potential barrier at the interface of p-GaN and F8T2 layer, the electrons and holes would be obstructed at MQWs and F8T2 layer, respectively. The large part of charge carriers can overcome the potential barrier with the input current. Therefore, the higher percentage of electrons would overcome the EBL to the F8T2 layer with the input current and the higher percentage of holes overcome the potential barrier at the interface between F8T2 and p-GaN and transport to MQWs with the input current. The concentration difference of electron and hole in both active region (F8T2 layer and MQWs) would decrease, so, there are higher blue light and yellow light are produced in MQWs and the F8T2 layer with the input current, respectively. Therefore, the external efficiency of the blue light and the yellow light in the F8T2/GaN LED increases with the input current. F8T2 layer act as the emission layer and the potential barrier at the interface between F8T2 and p-GaN can control the charge carrier injection. Therefore, the radiant flux ratio of different wavelength would not obviously change with the input current. So, the F8T2/GaN LED do not have obviously color deviation with the input current.

關鍵字(中)

★ 氮化鎵
★ 有機/無機發光二極體
★ 發光機制
★ 效率

關鍵字(英)

★ F8T2
★ GaN
★ organic/inorganic LED
★ emission mechanism
★ efficiency

論文目次

摘要 I
Abstract II
Table of Contents III
List of Figures V
List of Tables VIII
Chapter 1 Introduction 1
1.1 Gallium Nitride Light Emitting Diode 1
1.2 Organic Light Emitting Diode 5
1.3 F8T2 Characters 8
1.4 General Type of Hybrid Light Emitting Diode 9
Chapter 2 Motivation 12
Chapter 3 Experimental procedures 13
3.1 Gallium Nitride Light Emitting Diode Grown by Metal-organic Chemical Vapor Deposition 13
3.2 Preparation of F8T2 Organic Solution and Fabrication of F8T2/GaN LED 15
3.3 Instrumental analysis 16
Chapter 4 Characteristics of F8T2/GaN LED 18
4.1 Photoluminescence (PL) Properties of F8T2/GaN LED 18
4.2 Electroluminescence (EL) Properties of F8T2/GaN LED 20
4.3 Emission Characteristic of the F8T2 Layer 22
Chapter 5 Emission Mechanism of F8T2 in F8T2/GaN LED 31
5.1 Excess Carrier Phenomenon in F8T2/GaN LED 31
5.2 The charge carrier-recycling for electroluminescence 38
5.3 Efficiency of F8T2/GaN LED 41
Chapter 6 Summary 47
Reference 49

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指導教授

劉正毓(Cheng-Yi Liu)

審核日期

2018-7-24

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