氮化鋁鎵/氮化鎵高電子遷移率場效電晶體之表面披覆層研究

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姓名

姜彥丞(Yan-Cheng Jiang) 查詢紙本館藏

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電機工程學系

論文名稱

氮化鋁鎵/氮化鎵高電子遷移率場效電晶體之表面披覆層研究

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摘要(中)

本論文內容主要探討氮化鋁鎵/氮化鎵高電子遷移率場效電晶體使用不同表面披覆層對電性的影響。實驗使用三種表面披覆層包括傳統氮化鎵披覆層(GaN cap)，p型氮化鎵披覆層(p-GaN cap)和在MOCVD裡成長的氮化矽為披覆層(in-situ SiN cap)。實驗目的為利用不同的披覆層來提升元件的崩潰電壓和改善元件的動態電阻特性，並在製作蕭特基閘極元件前會先進行一系列的材料分析。
本實驗所製作的蕭特基閘極電晶體，在in-situ SiN cap元件上有低的閘極漏電流、(I_on/I_off )電流比值為1.71×108、低的次臨界斜率82 mV/dec以及有最大的元件崩潰電壓在汲極電流1 mA/mm下LGD = 20 μm約為1200 V。在動態特性方面p-GaN cap元件和in-situ SiN cap元件在汲極電壓100 V下動態電阻比值皆比GaN cap好，此兩種結構動態電阻比值分別為1.8和1.2。此外也利用脈衝量測去觀察三種表面披覆層之表面缺陷特性。
最後利用矽基板偏壓的方式去觀察元件在進行切換開關時電子被表面缺陷捕捉的情形，其中在GaN cap元件在量測上有較差的表現，電流回復到穩態時間最長，以及利用變溫量測的方式去計算缺陷的活化能。

摘要(英)

In this work, we focus on AlGaN/GaN HEMT with different cap layers which may influence on electrical property. We use three types of cap layers including conventional GaN cap,p-type GaN cap and in-situ SiN grown in the MOCVD. The purpose of this study is to improve device breakdown voltage and dynamic Ron. Material analysis is discussed before fabricating Schottky device.
Among the Schottky devices with different cap layers, in-situ SiN cap device has the lowest gate leakage current, high on/off current ratio 1.71×108, subthreshold slope at 82 mV/dec, and have the largest breakdown voltage about 1200V at LGD = 20 μm. In terms of dynamic Ron, p-GaN device and in-situ SiN device stressed at VDS = 100V show better results than GaN cap. The corresponding dynamic Ron ratio are 1.8 and 1.2, respectively. In addition, we use pulse measurement to investigate the surface trap in these three structure.
Finally, in this experiment we use substrate bias to separate device with the contributions of surface- and buffer-induced trapping effect. Among three structure, device with GaN cap show the worst performance, the current recovery to the steady state requiring longer time. The activation energy associated with the defects are analyzed by temperature-dependent dynamic Ron measurement.

關鍵字(中)

★ 氮化鋁鎵
★ 氮化鎵

關鍵字(英)

★ AlGaN
★ GaN

論文目次

目錄
摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 X
第一章緒論 1
1.1前言 1
1.2氮化鎵高電子遷移率場效電晶體發展與表面鈍化層相關研究 3
1.3本論文研究動機與目的 9
1.4論文架構 9
第二章氮化鋁鎵/氮化鎵場效電晶體於矽基板之磊晶結構與製程 10
2.1前言 10
2.2氮化鋁鎵/氮化鎵於矽基板之磊晶結構 10
2.3原子力顯微鏡觀測試片平坦度 14
2.4 X-射線繞射儀量測觀察磊晶品質 15
2.5霍爾量測與分析 18
2.6穿透式電子顯微鏡觀察 19
2.7蕭特基閘極場效電晶體製作 20
2.8結論 25
第三章氮化鋁鎵/氮化鎵閘極場效電晶體特性分析與比較 26
3.1前言 26
3.2蕭特基閘極場效電晶體直流電性分析 26
3.3蕭特基閘極場效電晶體脈衝量測與分析 40
3.4 結論 44
第四章氮化鋁鎵/氮化鎵場效電晶體動態特性量測與變溫效應 46
4.1前言 46
4.2蕭特基閘極場效電晶體動態特性分析 46
4.3氮化鋁鎵/氮化鎵場效電晶體變溫動態電阻量測 51
4.4矽基板偏壓下動態電阻量測簡介 57
4.5蕭特基閘極電晶體矽基板偏壓之電流崩塌效應分析與比較 59
4.6蕭特基閘極電晶體變溫特性 64
4.7結論 66
第五章結論與未來展望 67

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指導教授

辛裕明(Yue-ming Hsin)

審核日期

2015-8-4

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