利用 2D-二硫化鉬作為矽基單晶鍺薄膜之蕭特基接面光檢 測器特性分析

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曾貴聖(Gui-Sheng Zeng) 查詢紙本館藏

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光電科學與工程學系

論文名稱

利用 2D-二硫化鉬作為矽基單晶鍺薄膜之蕭特基接面光檢測器特性分析
(Characteristic analysis on the Schottky-junction photodetectors with the structure of 2D-molybdenum disulfide/germanium/silicon substrate)

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至系統瀏覽論文 (2027-8-1以後開放)

摘要(中)

隨著自駕車、3D 感測、消費性電子產業的興起，紅外光檢測器市場需求大幅提升，本論文主要研究為 2D-MoS2/單晶鍺薄膜/矽基結構之蕭特基接面光檢測器以取代昂貴的 InGaAs 光檢測器，使 LiDAR 等紅外光檢測器產品的生產成本得以大幅下降。
論文中分為三部分進行說明:(一) PVD 之磁控濺鍍法於矽基板成長單晶鍺薄膜，透過製程參數的優化，由 XRD 與 TEM 等結果研究證實鍺薄膜具有高度結晶且為(400)的結晶方向，最佳之樣品其 XRD 半高寬為 0.717°，作為光檢測器之主動層;(二) 利用少量的前驅物與乘載氣體製作高品質的單層直接能隙 2D-MoS2 薄膜，透過製程參數的優化，得到薄膜拉曼光譜∆k 為 19.97 cm-1 之 2D-MoS2 單層薄膜。PL 與吸收光譜量測證實 MoS2 為直接能隙，TEM量測MoS2層間距為0.617 nm與理論非常地符合，並且成功轉印單層 MoS2 至單晶鍺薄膜基板上，作為光檢測器之蕭特基接面的能障層; (三) 整合以上材料製作2D-MoS2/單晶鍺薄膜/矽基結構之蕭特基接面光檢測器，量測元件證實指叉狀電極寬度縮小至3 μm時響應度獲得大幅度的提升，並且於 2.5 V 時響應度最高達 0.22 A/W。

摘要(英)

With the rise of autonomous vehicle, 3D sensing, and consumer electronics industries, the market demand for infrared photodetectors has increased significantly. In this research, the Schottky-junction photodetectors with the structure of 2D-molybdenum disulfide/germanium/ silicon substrate have been developed to replace the expensive InGaAs photodetectors to reduce the production cost of infrared photodetectors, LiDAR.
This research has been divided into three parts: (1). The single crystal germanium films were grown by using magnetron sputtering method on silicon substrates. Through the process optimization, the single crystalline germanium film has been achieved and confirmed by the results of XRD and TEM shown the crystallographic direction of (400). The best XRD full-width at half-maximum of the germanium film is 0.717°, which can be applied as the active layer of the photodetector. (2). The fabrication of high-quality monolayer MoS2 thin films with direct energy gap by using a small amount of precursors and carrier gas. Through the process optimization, the Raman spectrum Δk of the film was 19.97 cm-1, which confirmed that MoS2 was a monolayer film. PL and absorption spectroscopy measurements confirmed that MoS2 film is a direct bandgap material. The interlayer spacing of monolayer MoS2 measured by TEM is 0.617 nm, which is in good agreement with the theoretical thickness. And the monolayer MoS2 was successfully transferred to the single-crystal germanium substrates to be the energy barrier layer for the Schottky junction of the photodetector. (3). The integration of the above materials to fabricate the Schottky-junction photodetectors with the structure of 2D-molybdenum disulfide/germanium/ silicon substrate. The photodetector measurement results have confirmed that the photo-responsivity was greatly improved when the width of the interdigitated electrode was reduced to 3 μm, and the responsivity was up to 0.22 A/W at 2.5 V.

關鍵字(中)

★ 鍺薄膜
★ RF磁控濺鍍
★ MoS2薄膜
★ 光檢測器

關鍵字(英)

★ Ge films
★ RF magnetron sputtering
★ MoS2 films
★ photodetector

論文目次

第一章緒論-------------------------------------------------------------------1
1-1 前言-----------------------------------------------------------------------1
1-2 研究動機------------------------------------------------------------------3
1-3 研究目的與方法-----------------------------------------------------------5
1-4 文獻回顧------------------------------------------------------------------6
1-5 論文架構-----------------------------------------------------------------12
參考文獻---------------------------------------------------------------------14
第二章分析儀器--------------------------------------------------------------16
參考文獻--------------------------------------------------------------------22
第三章矽基單晶鍺薄膜製備與量測--------------------------------------------23
3-1 簡介---------------------------------------------------------------------23
3-2 研究動機----------------------------------------------------------------25
3-3 基礎理論及文獻回顧-----------------------------------------------------28
3-3-1 電漿與濺鍍原理--------------------------------------------------------28
3-3-2 鍺晶體結構特性-------------------------------------------------------33
3-3-3 鍺材料電學特性-------------------------------------------------------37
3-3-4 鍺材料光學特性-------------------------------------------------------38
3-3-5 鍺薄膜製備方式及文獻回顧---------------------------------------------41
3-4 單晶鍺薄膜製程及量測---------------------------------------------------48
3-4-1 調變濺鍍靶材與基板之間的距離-----------------------------------------51
3-4-2 調變濺鍍功率---------------------------------------------------------55
3-4-3 調變基板端之製程溫度-------------------------------------------------60
3-4-4 調變抽氣速率---------------------------------------------------------63
3-4-5 調變製程氬氣流量-----------------------------------------------------68
3-4-6 調變基板載台之外加偏壓-----------------------------------------------70
3-4-7 調變氫氣流量----------------------------------------------------------75
3-4-8 最佳參數量測---------------------------------------------------------78
3-5 結論--------------------------------------------------------------------84
參考文獻--------------------------------------------------------------------86
第四章高品質 MoS2 之二維材料製備與量測-----------------------------------91
4-1 簡介---------------------------------------------------------------------91
4-2 研究動機----------------------------------------------------------------93
4-3 基礎理論及文獻回顧-----------------------------------------------------95
4-3-1 化學氣相沈積原理-----------------------------------------------------95
4-3-2 二硫化鉬晶體結構特性-------------------------------------------------97
4-3-3 二硫化鉬電學特性----------------------------------------------------102
4-3-4 二硫化鉬光學特性----------------------------------------------------104
4-3-5 二硫化鉬製備方式文獻回顧--------------------------------------------106
4-4 二維材料製程及量測-----------------------------------------------------111
4-4-1 二階段二硫化鉬薄膜製程-----------------------------------------------111
4-4-2 一階段二硫化鉬薄膜製程----------------------------------------------116
4-4-2-1 調變氬氣流量-------------------------------------------------------118
4-4-2-2 根據 Zone 1 溫度，調變硫粉開始加熱時間---------------------------121
4-4-2-3 調變硫粉重量------------------------------------------------------123
4-4-2-4 調變 MoO3 粉重量-------------------------------------------------125
4-4-2-5 調變 MoS2 硫化溫度-----------------------------------------------128
4-4-2-6 基板平放，大面積均勻性探討---------------------------------------130
4-4-2-7 MoS2 轉印製程----------------------------------------------------134
4-5 結論-------------------------------------------------------------------142
參考文獻-------------------------------------------------------------------144
第五章單晶鍺薄膜光檢測器元件製程及量測----------------------------------148
5-1 基礎理論---------------------------------------------------------------148
5-1-1 抗反射薄膜基礎理論---------------------------------------------------148
5-1-2 異質材料之歐姆接觸與蕭特基接觸-------------------------------------149
5-1-3 接面載子傳輸行為-----------------------------------------------------151
5-1-4 蕭特基光檢測器操作原理----------------------------------------------152
5-2 元件製程及量測---------------------------------------------------------153
5-2-1 抗反射薄膜設計與製程------------------------------------------------153
5-2-2 鍺薄膜光檢測器元件製程----------------------------------------------156
5-2-3 鍺薄膜光檢測器元件量測----------------------------------------------158
5-2-3-1 無/單層 MoS2 之鍺薄膜光檢測器量測(低阻)--------------------------158
5-2-3-2 不同矽基板之單層 MoS2 鍺薄膜光檢測器量測------------------------159
5-2-3-3 單層/雙層 MoS2 之鍺薄膜光檢測器量測(高阻)------------------------160
5-2-3-4 改變指電極寬度之鍺薄膜光檢測器量測(低阻)-------------------------162
5-3 結論-------------------------------------------------------------------163
參考文獻-------------------------------------------------------------------165
第六章結論與未來展望------------------------------------------------------166

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2022-3-25

推文