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姓名	羅承瑋(Cheng-Wei Luo)  查詢紙本館藏	畢業系所	光電科學與工程學系
論文名稱	以濺鍍法製作n-type重摻雜鍺薄膜於 太陽能電池之應用 (Fabrication of N-type Heavily Doped Germanium Thin Films by Magnetron Sputtering for the Application of Solar Cell)
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檔案	[Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   [檢視]  [下載] 本電子論文使用權限為同意立即開放。 已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。 請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。
摘要(中)	至今化石能源逐漸耗竭，須有新的能源作為取代，而乾淨、環保、再利用的綠色能源為最受矚目及未來性的趨勢，其中以太陽能電池最具代表性。在當今眾多種類的太陽能電池中，III-V族多接面太陽能電池的轉換效率最佳，本實驗團隊將以濺鍍法在矽基板上鍍製n-type重摻雜鍺薄膜，形成一種可應用於III-V族半導體磊晶製程之新型Ge-Si基板，重摻雜之n-type膜層未來可以做為穿隧接面之應用，讓元件達到電流匹配，使III-V族多接面太陽能電池效率達到最佳化。 本論文研究之n-type重摻雜鍺薄膜的實驗架構為：1.改變製程溫度和濺鍍功率，測試出最佳鍍膜參數。2.以最佳鍍膜參數的樣品進行爐管熱退火，探討不同退火溫度及時間對鍺薄膜結晶性與摻雜濃度的改變。3.將n-type重摻雜鍺薄膜的厚度設計在100 nm以下，並研究其厚度對結晶性與摻雜濃度的影響。以此架構所製作的n-type重摻雜鍺薄膜，濺鍍厚度約為500 nm，在最佳化製程條件下，XRD量測分析半高寬為最小，摻雜濃度可大於1019 cm-3，而厚度設計在100 nm時，其摻雜濃度也可大於1018 cm-3。
摘要(英)	In this study, n-type heavily doped germanium(Ge) thin films on silicon substrates by using magnetron sputtering method was investigated. Since the conversion efficiency of III-V multi-junction solar cell is still the highest, the n-type Ge films on silicon can be the virtual substrates to replace the high-cost Ge substrates. We used magnetron sputtering system with Sb/Ge alloyed target to grow the n-type heavily doped Ge films on Si (100) wafer. And the post annealing process was applied to improve the Ge thin film qualities. XRD, Raman spectrometer, AFM were used to analyze the crystallization of the Ge thin films. The Hall measurement was also applied to measure the carrier concentration and mobility of the n-type Ge thin films. The results showed the FWHM of the Ge (400) diffraction peak of Ge thin films can be improved as low as 0.3°. And the Hall measurement showed the carrier concentration of n-type Ge thin film can be increased to more than 1019cm－3.
關鍵字(中)	★ 重摻雜 ★ 鍺薄膜 ★ 濺鍍法 ★ 太陽能電池	關鍵字(英)
論文目次	摘要 i Abstract ii 致謝 iii 目錄 iv 圖目錄 vi 表目錄 viii 第一章 緒論 1 1-1前言 1 1-2研究動機與目的 3 1-3論文架構 6 第二章 文獻回顧 7 2-1 鍺材料應用 7 2-2 鍺薄膜常見的鍍製方式 8 2-3 N-type 鍺薄膜的相關研究 9 第三章 實驗流程和設備與分析工具 13 3-1 實驗流程 13 3-2 實驗設備與分析工具 13 3-2-1 濺鍍設備 13 3-2-2 X光繞射儀 14 3-2-3 拉曼光譜儀 15 3-2-4 霍爾量測儀 16 3-2-5 原子力顯微鏡(Atomic Force Microscope, AFM) 18 3-2-6 退火系統 19 第四章 於矽基板上鍍製n-type鍺薄膜 20 4-1調變製程溫度鍍製銻鍺薄膜 20 4-2調變濺鍍功率鍍製銻鍺薄膜 30 4-3銻鍺薄膜在退火系統分析 38 4-4調變銻鍺薄膜厚度 47 第五章 結論與未來工作 54 5-1結論 54 5-2未來工作 55 參考文獻 56
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指導教授	陳昇暉	審核日期	2017-8-18
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