探討利用射頻磁控濺鍍形成的鍺島之生長機制

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姓名

利映澤(Ying-Tse Li) 查詢紙本館藏

畢業系所

照明與顯示科技研究所

論文名稱

探討利用射頻磁控濺鍍形成的鍺島之生長機制
(The growth mechanism of Ge islands by RF magnetron sputtering systems)

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摘要(中)

本論文將使用射頻磁控濺鍍進行薄膜沉積並結合後退火製程，作為主要的實驗方法。島狀形成的成因主要是利用鍺材料與矽材料之間的晶格常數差異。鍺材料在特定的生長條件下，將會由二維結構逐漸轉變為三維結構，並藉由以下變因來探討鍺島的生長機制，其中包括了後退火的方式、後退火的溫度、後退火的持溫時間、濺鍍功率以及鍺薄膜沉積在不同材料上等差異，之後並針對這些自我組裝形成的島狀結構進行拉曼光譜、原子力顯微鏡、掃描式電子顯微鏡等進行分析。
本實驗採用射頻磁控濺鍍是因為相較於其他已知可行的製程較為便宜，如，分子束磊晶，化學氣相沉積等，且製程材料不具有毒氣體也較為穩定，因此在往後應用在商業用途上將會是一大關鍵。

摘要(英)

In this thesis, we have used RF magnetron sputtering systems and post-annealing process as primary experiment method. The formation of Ge islands is based on the difference in lattice constants between Si and Ge. These Ge films would transform their morphology from 2-dimension to 3-dimension, by controlling the following parameters to study their growth mechanism, such as, post-annealing method, post-annealing temperature, post-annealing soaking time, the sputtering power and with or without the interlayer. Then, we have analyzed these Ge islands by Raman spectrum, atomic force microscopy (AFM) and scanning electron microscopy (SEM).
The RF magnetron sputtering is used in this experiment because it is cheaper than other processes, such as molecular beam epitaxy, chemical vapor deposition, etc., and its raw materials are non-toxic and stable. Therefore, it will be one of the key processes in the production for the commercial applications.

關鍵字(中)

★ 濺鍍
★ 鍺島

關鍵字(英)

★ Sputtering
★ Ge island

論文目次

Chapter 1. Introduction 1
1.1. Background 1
1.2. Paper review 2
The advantage of Ge thin films growth 2
The fabrication of Ge and SiGe micro-structures 4
The application of Si and Ge with micro-structures 6
1.3. Motivation 8
Chapter 2. Theory and Operation Principle 9
2.1. Sputtering system 9
2.2. Annealing theory 10
2.3. Mechanisms of Stranski–Krastanov growth 10
2.4. The Principle of Raman spectrum 11
2.5. The Principle of Scanning Electron Microscopy (SEM) 12
2.6. The Principle of Atomic Force Microscopy (AFM) 13
Basic Operation Principles 13
Operation Modes 14
2.7. The phase change of Atomic Force Microscopy 15
The Force Verse Distance 15
The Spring Constant and Phase angle 16
Chapter 3. Experiment equipment and Process 17
3.1. Cluster sputtering system 17
3.2. The Heat Treatment System 18
3.3. Raman system 19
3.4. Atomic force microscopy 20
3.5. Scanning Electron microscopy 21
3.6. Experiment Process 22
Sample Cleaning Process 22
Thin Films Fabrication 23
The Island Structure Formation 23
Chapter 4. Result and Discussion 25
4.1. RTA Process 25
4.2. Annealing Temperature 33
4.3. Annealing Time 39
4.4. The sputtering power of deposited films 43
4.5. Interlayer 53
Chapter 5. Conclusion and Future work 67
Reference 69

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2019-1-29

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