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姓名	徐子杰(Tzu-Chieh Hsu)  查詢紙本館藏	畢業系所	光機電工程研究所
論文名稱	微發光二極體於可撓式基板之電熱模擬研究
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摘要(中)	相較於傳統發光二極體(Light-emitting diode, LED)，微型發光二極體(micro LED)因具有高解析度、高對比、高色彩飽和度、反應速度快及壽命長等特性，逐漸成為未來發展的重點項目之一，其相關研究也隨之備受關注。Micro LED屬於結合多領域的科技產品，為此，於元件製造前若能有效的模擬其溫度分佈與效能，將有助於後續元件整體規畫，而能降低製造成本。 本論文目的為建立一套完整的可撓式micro-LED半導體特性與電熱耦合模擬模型，並藉由模擬結果與文獻之分析比較，以驗證模型。在此使用COMSOL軟體建構三維micro-LED模型，藉由設置幾何尺寸、各層材料參數及邊界條件，模擬micro-LED元件效率及溫度分佈。 本論文除模擬單一micro-LED元件之效率及電特性外，亦使用三牆結構以探討牆寬大小、基板導熱係數、基板厚度等參數對元件量子阱溫度的影響。由模擬結果得知:透過提升基板導熱係數、增大晶粒間的牆寬，以及增加元件基板的厚度皆可降低元件量子阱的溫度。
摘要(英)	Compared with traditional light-emitting diodes (LEDs), micro light-emitting diodes (micro-LEDs) have the higher resolution, higher color saturation, longer lifetime, and a higher contrast ratio. Hence, this study will focus on micro-LED for more analyses on the overall chip-design to reduce the manufacturing costs. The purpose of this research is to establish a complete model simulating semiconductor characteristics and the electro-thermal coupling effects for the flexible micro LEDs. The model is constructed via the simulation software, COMSOL. Furthermore, a three-wall structure is investigated via three parameters, including wall-spacing, thermal conductivity, and thickness of the substrate, to know their effects on the quantum-well temperature. According to the simulation results, the quantum-well temperature can be reduced by increasing the thermal conductivity of the substrate, the thickness of the substrate, and the wall-spacing.
關鍵字(中)	★ 可撓式micro-LED ★ 溫度分佈 ★ 三牆結構	關鍵字(英)	★ Flexible micro LEDs ★ Thermal distribution ★ Three-wall structure
論文目次	目錄 摘要 I Abstract II 致謝 III 目錄 V 圖目錄 VII 表目錄 X 第一章、緒論 1 1-1 前言 1 1-2 文獻探討 3 1-3 研究動機 9 1-4 論文研究架構 10 第二章、基礎理論與原理 11 2-1 發光二極體發光原理 11 2-2 發光二極體發熱原理 13 2-2-1 蕭特基-瑞德-霍爾複合 16 2-2-2 歐傑複合 16 2-3 固體熱傳導理論 17 2-4 熱電耦合理論 19 2-5 小結 20 第三章、模擬設計與架構 21 3-1 Micro-LED半導體模擬方法 21 3-2 Micro-LED電模擬方法 28 3-3 Micro-LED熱模擬方法 33 3-3-1熱模擬主導公式 35 3-3-2 熱傳導係數量測原理 39 3-4 Micro-LED電熱模擬 41 3-5本章小結 43 第四章、模擬結果與討論 44 4-1 半導體模擬模型之驗證 44 4-1-1 IQE曲線之峰值(peak value) 44 4-1-2 峰值過後的效率驟降(Efficiency droop) 45 4-2 半導體模擬結果分析 48 4-2-1蕭特基-瑞德-霍爾(SRH)複合對內部量子效率之影響 48 4-2-2輻射複合對內部量子效率之影響 49 4-2-3歐傑複合對內部量子效率之影響 50 4-3 熱模擬結果分析 51 4-3-1基板導熱係數對量子阱溫度之影響 51 4-3-2熱介面材料對量子阱溫度之影響 52 4-3-3熱介面材料厚度對量子阱溫度之影響 54 4-3-4有無散熱板對量子阱溫度之影響 55 4-3-5散熱板厚度對量子阱溫度之影響 56 4-3-6散熱板材料對量子阱溫度之影響 57 4-3-7牆寬大小對量子阱溫度之影響 59 4-3-8基板厚度對量子阱溫度之影響 62 4-4 模擬結果與文獻之比較與分析 63 4-5 本結 64 第五章、結論與未來展望 65 5-1 結論 65 5-2 未來展望 66 參考資料 67
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指導教授	韋安琪(An-ChiWei)	審核日期	2022-9-23
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