氮化鎵高電子遷移率電晶體之低頻雜訊探討與功率放大器應用

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姓名

楊士陞(Shih-Sheng Yang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

氮化鎵高電子遷移率電晶體之低頻雜訊探討與功率放大器應用
(Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and Design of GaN Doherty Power Amplifier)

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摘要(中)

本論文以氮化鎵(GaN)高電子遷移率電晶體(HEMT)進行元件低頻雜訊特性與應用於Sub-6 GHz單晶片微波積體電路(MMIC)功率放大器研究。透過雜訊功率頻譜密度(power spectral density)的方式將二種氮化鎵元件(有/無p-GaN閘極層)操作於線性區進行低頻雜訊的量測，探討出元件的閃爍雜訊(flicker noise)由carrier number fluctuation機制所主導。並推導出p型氮化鎵閘極元件可能由於p-GaN閘極層的鎂向外擴散至AlGaN能障層與GaN通道層，在AlGaN/GaN介面處有相對無p-GaN閘極層有較高的缺陷密度。同時發現成長於SiC基板上之商用氮化鎵高頻元件(無p-GaN閘極層)在低頻區域下除了閃爍雜訊之外也存在產生-再結合雜訊(generation-recombination noise: g-r noise)。利用不同環境溫度測量，使用阿瑞尼斯圖的方式分析g-r noise的缺陷位置，得到位於導通帶之下0.35 ~ 0.53 eV缺陷。
另外藉由商用氮化鎵高電子遷移率電晶體製程技術設計一應用於5G通訊系統Sub-6 GHz頻段之MMIC Doherty功率放大器，測量出Doherty功率放大器操作於3.5 GHz時其輸出功率增益達11.6 dB，1-dB功率壓縮點(OP1dB)為26.9 dBm，最大輸出功率(PSAT)達33.2 dBm，功率附加效率(PAE)為24.4 %。此外，透過64-QAM正交幅度調變的數位調變訊號觀察當向量誤差失真(EVM) < -25 dB時其平均輸出功率最高可達27.7 dBm，且其鄰近通道功率比例(ACPR)為-29.7 dBc。

摘要(英)

In this study, gallium nitride (GaN) high electron mobility transistor (HEMT) low-frequency noise characteristics and monolithic microwave integrated circuit (MMIC) power amplifier at Sub-6 GHz application are presented. Noise power spectral density (PSD) of two types of devices (with/without p-GaN gate layer) have been characterized in linear region by using low-frequency noise measurement, demonstrating that flicker noise of devices are dominated by carrier number fluctuation. Also, derived that devices with p-GaN gate layer show higher trap density at AlGaN/GaN interface probably due to magnesium(Mg) out-diffusing into AlGaN barrier and GaN channel. Meanwhile, devices which fabricated on SiC substrate (without p-GaN gate layer) RF devices in low-frequency region not only 1/f noise exists also accompany by generation-recombination noise (g-r noise) has been observed. In this case, devices measured at various temperature, using Arrhenius plot extracted that g-r noise originated from a trap level with 0.35 ~ 0.53 eV below conduction band.
MMIC Doherty power amplifier (DPA) operating at Sub-6 GHz for 5G communication system applications were designed based on commercial GaN HEMT process. The measured DPA exhibits power gain of 11.6 dB, 1-dB compression point (OP1dB) of 26.9 dBm, a saturated output power (PSAT) of 33.2 dBm, and a power added efficiency (PAE) of 24.4% at 3.5 GHz. Moreover, DPA can deliver maximum average power of 27.7 dBm with error vector magnitude (EVM) < -25 dB for 64-quadrature amplitude modulation (QAM) signals and adjacent channel power ratio (ACPR) of -29.7 dBc.

關鍵字(中)

★ 氮化鎵
★ 高電子遷移率電晶體
★ 低頻雜訊
★ 功率放大器

關鍵字(英)

論文目次

中文摘要 x
Abstract xi
致謝 xii
目錄 xiii
圖目錄 xv
表目錄 xxi
第一章緒論 1
1.1 氮化鋁鎵/氮化鎵材料特性 1
1.2 氮化鎵高頻元件之回顧 5
1.3 氮化鎵元件之低頻雜訊文獻回顧與應用 8
1.4 氮化鎵元件應用於射頻電路現況與文獻回顧 10
1.5 研究動機與論文架構 14
第二章 AlGaN/GaN HEMT於不同基板上之低頻雜訊分析 15
2.1 元件佈局設計 15
2.1.1 AlGaN/GaN HEMT on SiC不同背向穿孔布局設計元件 15
2.1.2 AlGaN/GaN HEMT on SiC不同閘極-源極距離大小元件 17
2.1.3 AlGaN/GaN MIS-HEMT on Si不同閘極寬度大小元件 18
2.1.4 p-GaN gate AlGaN/GaN HEMT on Si元件 19
2.1.5 p-GaN gate AlGaN/GaN HEMT on Si加一源極場板元件 20
2.2 元件直流和高頻特性 22
2.3 元件之電流崩塌分析 28
2.4 元件之低頻雜訊量測及分析 39
2.4.1 低頻雜訊介紹 40
2.4.2 McWhorter’s model (Carrier Number Fluctuation) 43
2.4.3 Hooge’s mobility Fluctuation model 44
2.4.4 低頻雜訊量測與分析 (1/f Noise量測) 45
2.4.5 AlGaN/GaN HEMT元件之低頻產生-再結合雜訊分析 53
2.5 本章總結 56
第三章 Sub-6 GHz氮化鎵單片微波積體電路Doherty功率放大器設計 58
3.1 功率放大器基本原理與非線性效應 58
3.1.1 功率放大器設計原理 58
3.1.2 功率放大器非線性效應 60
3.2 Doherty功率放大器工作原理 65
3.3 應用於Sub-6 GHz之單級Doherty功率放大器 68
3.4 本章總結 79
第四章結論 80
參考文獻 81
附錄 A. 應用於Ka-Band GaAs MMIC pHEMT Two-Stage Doherty功率放大器 86
附錄 A. 參考文獻 93
Publication/Acknowledgement 94

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指導教授

辛裕明(Yue-Ming Hsin)

審核日期

2021-9-14

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