在可撓曲矽單晶基材上製備銀/多孔隙矽晶奈米線/矽晶孔洞異質結構陣列及其氣體感測特性研究

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姓名

翁宏諭(Hong-Yu Wong) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

在可撓曲矽單晶基材上製備銀/多孔隙矽晶奈米線/矽晶孔洞異質結構陣列及其氣體感測特性研究

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摘要(中)

本研究以兩步驟金屬輔助無電鍍化學蝕刻法，成功地於Ptype(001)、N type(001)晶面之矽單晶基材上製備高深寬比、大面積準直矽晶奈米線陣列，再由丙酮、氧氣驗證趨勢變化與機制。除此之外，更進一步以橫向蝕刻製備多孔隙矽晶奈米線陣列，此多孔隙奈米結構展現更優異之比表面積，由氣體感測結果證明其大幅提升對丙酮感測之性能，再將最佳條件矽晶多孔隙奈米線陣列以無電鍍銀均勻披覆多孔隙奈米線上。銀/多孔隙矽晶奈米線陣列蕭特基氣體感測器在額定電壓下量測氣體響應、靈敏度、響應時間及恢復時間。最後，將具有最佳製程條件直接與超薄可撓曲矽單晶基材整合。
本研究以一步驟金屬輔助均勻化學蝕刻法成功製備超薄可撓曲矽單晶基材，再透過其上製程條件製備可撓曲銀/多孔隙矽晶奈米線陣列，展現十分優異之彎曲能力，可分別於 2.5cm、 1.6cm 曲率半徑下進行氣體感測，測試彎曲前後是否因比表面積增加，而更加提升對丙酮之響應。
最後，針對多孔隙所造成恢復時間增加提出改善方式，正面以奈米線為基礎上，背面以孔洞為基礎，製備出可撓曲銀/多孔隙矽晶奈米線/矽晶孔洞異質結構陣列，使得氣體有另一個途徑進行脫附，藉此縮短恢復時間，達到元件性能之優化。

摘要(英)

In this study, the high aspect ratio, large-area, vertically-aligned single crystalline silicon
nanowire arrays (SiNWs) on P type (001) and N type (001) silicon substrate is successfully fabricated by the two-step metal-catalyzed electroless etching approach. It is proved the variation trend and mechanism by the acetone and oxygen. In addition, the single crystalline porous silicon nanowire arrays is further fabricated by the lateral etching, the porous nanostructure exhibited excellent specific surface area, from the result of gas sensing, it substantially enhance performance for acetone, and then we use the best one is uniformly decorated Ag on the porous SiNWs by the electroless Ag deposition. The produced porous Ag/SiNWs Schottky junction gas sensor is able to operate at any voltage and exhibit response, sensitivity, response time and recovery time.
The flexible porous Ag/SiNWs Schottky junction gas sensor is demonstrated by combining with ultra-thin Si substrate which has excellent bending ability, and it can be applied to achieve gas sensing on 2.5 cm and 1.6 cm curvature surface. The resulting response enhancement can be attributed to specific surface area enhancement after bending.
In the last, we proposed improvement for the increase of recovery time caused by porosity. The front side is based on nanowires and the back side is based on holes. There is another way to desorb. Therefore, we look forward to shortening the recovery time and optimizing the performance of the device.

關鍵字(中)

★ 矽晶奈米線
★ 橫向蝕刻
★ 無電鍍披覆銀
★ 可撓曲矽單晶基材
★ 氣體感測器

關鍵字(英)

論文目次

第一章前言及文獻回顧 1
1-1 前言 1
1-2 矽晶奈米線之製備方法 3
1-3 氣體感測原理與機制 5
1-3-1一維奈米結構氣體感測器 5
1-3-2 金屬氧化物半導體感測氣體之機制 7
1-3-3 矽晶半導體感測氣體之機制 9
1-4 金屬奈米粒子製備方法及其增強氣體感測機制 10
1-5 超薄可撓曲矽晶感測元件 12
1-5-1 超薄可撓曲感測元件之多元應用 12
1-5-2 超薄可撓曲矽晶元件之製程 13
1-6 研究動機及目標 15
第二章實驗步驟及儀器設備 17
2-1 實驗步驟 17
2-1-1 矽單晶基材使用前處理 17
2-1-2 製備超薄可撓曲矽單晶基材 18
2-1-3 兩步驟金屬輔助化學蝕刻法製備矽晶孔洞陣列 18
2-1-4 兩步驟金屬輔助化學蝕刻法製備矽晶奈米線陣列 18
2-1-5 橫向蝕刻法製備可撓曲多孔隙矽晶奈米線/矽晶孔洞異質結構陣列 19
2-1-6 以各式氧化製程測試元件響應度 19
2-1-7 無電鍍銀奈米粒子均勻披覆多孔隙矽晶奈米線之製備 20
2-1-8 製備氣體感測元件 21
2-2 試片分析 21
2-2-1 掃描式電子顯微鏡 21
2-2-2 穿透式電子顯微鏡 22
2-2-3 氣體感測系統 22
第三章結果與討論 23
3-1 製備矽晶奈米線陣列 23
3-1-1 矽晶奈米線陣列之製備 23
3-1-2 多孔隙矽晶奈米線陣列之製備 24
3-1-3 無電鍍銀奈米粒子均勻披覆多孔隙矽晶奈米線陣列 25
3-2 P型矽晶奈米線及N型矽晶奈米線陣列之氣體感測分析 25
3-2-1 矽晶奈米線陣列氣體感測元件之電極設計及測試性能指標 26
3-2-2 氣體分子與感測元件表面變化 27
3-2-3 製備不同氧化途徑之矽晶奈米線 27
3-2-4 P型矽晶奈米線陣列之氣體感測性質分析 28
3-2-5 P型多孔隙矽晶奈米線陣列之氣體感測性質分析 29
3-2-6 P型銀/多孔隙矽晶奈米線陣列之氣體感測性質分析 30
3-2-7 N型矽晶奈米線陣列之氣體感測性質分析 30
3-2-8 P型與N型矽晶奈米線陣列之感測機制及其銀奈米粒子增強氣體感測機制 31
3-3 P型可撓曲矽單晶基材上製備銀/多孔隙矽晶奈米線陣列 33
3-3-1可撓曲矽單晶基材之製備 34
3-3-2無電鍍銀奈米粒子均勻披覆可撓曲多孔隙矽晶奈米線陣列之製備 35
3-3-3無電鍍銀奈米粒子均勻披覆可撓曲多孔隙矽晶奈米線陣列之氣體感測性質分析 35
3-3-4 無電鍍銀奈米粒子均勻披覆可撓曲多孔隙矽晶奈米線/矽晶孔洞異質結構陣列之製備 36
3-3-5 無電鍍銀奈米粒子均勻披覆可撓曲多孔隙矽晶奈米線/矽晶孔洞異質結構陣列之氣體感測性質分析 37
第四章結論與未來展望 38
4-1 結論 38
4-2 未來展望 39
參考文獻 40
表目錄 46
圖目錄 48

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指導教授

鄭紹良

審核日期

2022-9-29

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