| 姓名 |
張庭浩(Ting-Hao Chang)
查詢紙本館藏 |
畢業系所 |
光電科學與工程學系 |
| 論文名稱 |
生長在氮化硼磊晶層的氮化鋁鎵量子阱
(AlGaN quantum wells grown on BN epilayer)
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| 相關論文 | |
| 檔案 |
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| 摘要(中) |
目前生長紫外光發光二極體的磊晶結構時，通常會以藍寶石(c-plane)為基板，並利用氮化鋁(AlN)作為緩衝層來生長氮化鋁鎵(AlGaN)多層量子井(multiple quantum wells, MQWs)。這樣的磊晶結構會產生很強的偏極電場，使得電子、電洞分別集中量子井的上下側，造成發光效率低落。雖然有研究人員使用非極性的氮化物基板、生長非極性量子井，但這樣的非極性基板非常昂貴且面積小，難以量產。為了解決這問題，本研究利用立方氮化硼(cubic boron nitride, cBN)成長非極性AlGaN MQWs，以提高量子井的發光效率。
利用一維 drift-diffusion charge control solver (1D DDCC) 軟體，我們模擬AlGaN MQWs/cBN與AlGaN MQWs/AlN的能帶結構，顯示AlGaN MQWs/AlN的偏極電場會產生傾斜的量子井能帶，降低MQW的發光效率。為了降低AlGaN MQWs裡的偏極電場，我們在AlGaN MQWs與藍寶石基板之間插入一層cBN，並以脈衝噴氣(pulsed flow)的方式生長cBN，最後以光致發光(photoluminescence spectra, PL)光譜確認cBN表面能成長均勻發光的AlGaN MQWs結構。與AlGaN MQWs/AlN相較，AlGaN MQWs/cBN的PL強度較低，這是由於cBN表面的AlGaN MQWs磊晶品質較低的關係。我們將持續優化cBN的磊晶參數，以提升cBN表面的AlGaN MQWs磊晶品質。 |
| 摘要(英) |
In the epitaxial growth of ultraviolet light-emitting diodes (UV LEDs), AlN is often used as the buffer layer for AlGaN multiple quantum wells (MQWs) on c-plane sapphire substrates. The strong polarization-induced electrical field in the c-plane epilayers severely reduce the radiative recombination efficiency in MQWs. Although the internal electrical field can be avoided by growing the MQWs on nonpolar AlN substrates, the nonpolar substrates are very expensive and limited in size. To address the issue, we adopted cubic boron nitride (cBN) as the template for the growth of AlGaN MQWs.
Using drift-diffusion charge control solver (1D DDCC), we compare the band tilting of AlGaN MQWs/cBN and AlGaN MQWs/AlN, showing that the electrons and holes are concentrated on the opposite sides of QW, which decreases the radiative recombination efficiency. To reduce the internal electrical field in MQWs, a thin cBN epilayer was inserted between MQWs and sapphire. For the growth of cBN, a pulse-flow technique was used to improve the surface flatness. The uniform radiation of MQWs on cBN was confirmed by photoluminescence (PL) spectra. The PL intensity of AlGaN MQWs on cBN was slightly lower than that on AlN, which is due to the deteriorated crystal quality of MQWs on cBN. |
| 關鍵字(中) |
★ 氮化硼
★ 紫外線發光二極體
★ 量子阱
★ 氮化鋁鎵 |
關鍵字(英) |
★ BN
★ UV LED
★ Quantum well
★ AlGaN |
| 論文目次 |
摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 v
表目錄 vi
第一章 緒論 1
1.1 前言 1
1.2 UV LED 的發展限制與瓶頸 3
1.3 文獻回顧 4
1.4 cBN 和 AlN 的非極性與極性結構 6
1.4.1 cBN 6
1.4.2 AlN 7
1.5 cBN 應用於 UV LED 的潛力 8
1.6 研究動機 9
第二章 實驗製程、方法與儀器 10
2.1 磊晶製備與結構設計 10
2.2 有機金屬化學氣相沉積法 12
2.3 X射線繞射儀 14
2.4 PL 量測 19
2.5 AFM 量測 20
第三章 結果分析與討論 21
3.1 結構模擬 21
3.2 MQWs波長與強度調整 24
3.3 磊晶品質與組成量測 26
3.3.1 XRD分析 26
3.3.2 AFM分析 32
3.4 PL發光波長與強度量測 34
3.5 調整 BN 脈衝噴氣週期之影響 37
第四章 結論與未來展望 41
第五章 參考文獻 42 |
| 參考文獻 |
[1] Winstar. (n.d.). Introduction to OLED Technology. Winstar Display. Retrieved from https://www.winstar.com.tw/zh-tw/technology/oled/36.html on June 14, 2024.
[2] M. Kneissl, J. Rass, A brief review of III – Nitrides UV emitter Technologies and their applications, III – Nitride Ultraviolet Emitters, Springer series in Materials Science 227, Springer International Publishing, Switzerland, 2016.
[3] Wang, Yixin, et al. "Deep ultraviolet light source from ultrathin GaN/AlN MQW structures with output power over 2 watt." Advanced Optical Materials 7.10 (2019): 1801763.
[4] Wetzel, C., et al. "Light-emitting diode development on polar and non-polar GaN substrates." Journal of Crystal Growth 310.17 (2008): 3987-3991.
[5] Kinoshita, Toru, et al. "Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy." Applied Physics Express 6.9 (2013): 092103.
[6] Banal, Ryan G., Yoshitaka Taniyasu, and Hideki Yamamoto. "Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells." Applied Physics Letters 105.5 (2014).
[7] Grandusky, James R., et al. "Pseudomorphic growth of thick n-type AlxGa1− xN layers on low-defect-density bulk AlN substrates for UV LED applications." Journal of Crystal Growth 311.10 (2009): 2864-2866.
[8] Wang, Chang-Pei, and Yuh-Renn Wu. "Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode." Journal of Applied Physics 112.3 (2012).
[9] Huang, Chun-Pin, et al. "Crystal Transformation of Cubic BN Nanoislands to Rhombohedral BN Sheets on AlN for Deep-UV Light-Emitting Diodes." ACS Applied Nano Materials 3.6 (2020): 5285-5290.
[10] Wikipedia. (n.d.). Boron nitride. Wikipedia. Retrieved from https://zh.wikipedia.org/wiki/%E6%B0%AE%E5%8C%96%E7%A1%BC on June 14, 2024.
[11] Wikipedia. (n.d.). Gallium nitride. Wikipedia. Retrieved from https://zh.wikipedia.org/zh-tw/%E6%B0%AE%E5%8C%96%E9%8B%81 on June 14, 2024.
[12] Wikipedia. (n.d.). Bragg′s law. Wikipedia. Retrieved from https://zh.wikipedia.org/zh-tw/%E5%B8%83%E6%8B%89%E6%A0%BC%E5%AE%9A%E5%BE%8B on June 14, 2024.
[13] Epp, J. "X-ray diffraction (XRD) techniques for materials characterization." Materials characterization using nondestructive evaluation (NDE) methods. Woodhead Publishing, 2016. 81-124.
[14] 取自新興智慧顯示科技教育聯盟 https://sites.google.com/nycu.edu.tw/ywh/第二期課程/a14-led與ld製程與應用
[15] Huang, Chun-Pin, et al. "High-quality AlN grown with a single substrate temperature below 1200 C." Scientific reports 7.1 (2017): 7135.
[16] Brunner, F., et al. "High-temperature annealing of AlN films grown on 4H–SiC." AIP Advances 10.12 (2020). |
| 指導教授 |
賴昆佑(Kun-Yu Lai)
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審核日期 |
2024-7-12 |
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