透過氫電漿處理提升 FeFET 之耐久性、儲 存密度與讀取速度並改善 FeCAM 設計中的 穩定性與漢明距離

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黃子容(Zi-Rong Huang) 查詢紙本館藏

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電機工程學系

論文名稱

透過氫電漿處理提升 FeFET 之耐久性、儲存密度與讀取速度並改善 FeCAM 設計中的穩定性與漢明距離
(Enhancing FeFET Endurance、Storage Density、Read Speed through H2 Plasma Treatment, and Improving Stability and Hamming Distance in FeCAM Designs)

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摘要(中)

在本次實驗中我們提出了一種利用氫電漿處理元件的方法，此方法提升了元
件的穩定性、操作速度和可靠性。我們透過 XPS、TEM 等物性分析鐵電薄膜與各元件的材料差異，並針對氫電漿處理前後元件的 ION/IOFF 比、極化切換速度、耐久性、數據保留性、多層儲存單元操作等多項電性數據進行比較分析。此外，我們還透過將 1N-1P 的兩個鐵電電晶體組合成一個 FeCAM cell，並同樣對其進行電性及物性分析。透過多項分析，我們發現在 FeFET 方面氫電漿處理後介面缺陷密度由 8.04 × 1012????/????2 降低到了 5.5 × 1012????/????2，這就使得元件 ION/IOFF 比可以達到 8 個級距，比原本高出了兩個級距，漏電電流也明顯小於處理前 1~2 個級距。並且透過 XPS 發現 HZO 薄膜中的氧缺陷濃度降低了將近 50-60%，這將改善由氧空缺引起的電荷捕捉效應，可使元件 wake up free，並將耐久性提高到超過 1011次。此外，氫電漿處理降低了 pinning field，加速了極化切換，並減少了印痕效應。改善了多層儲存單元的操作，由原本 TLC 提升至 QLC，並且在變異性改善方面提升了 46%。透過將測試脈波、Gmax/Gmin、狀態數等參數輸入 MNIST 系統中，其手寫辨識度達到了 91.1%。而 FeCAM 方面氫電漿處理後的 VOFF 的標準差從64mV 降到 38mV，並且 MHD 甚至是原本的 6 倍，此外，Arrhenius 方程擬合結果顯示，該 FeCAM 在 99.5°C 下仍能保持十年的數據。

摘要(英)

In this study, we proposed a method utilizing hydrogen plasma treatment to enhance the stability, operating speed, and reliability of devices. We performed material analysis on ferroelectric thin films and various components using XPS, TEM, and other techniques, comparing the electrical characteristics of the devices before and after hydrogen plasma treatment, including the ION/IOFF ratio, polarization switching speed, endurance, data retention, and multi-level cell (MLC) operation. Additionally, we combined two FeFETs (1N-1P) to form a FeCAM cell, conducting both electrical and material analysis.Through various analyses, we found that the interface trap density in FeFETs was reduced from 8.04 × 1012 μC/cm2 to 5.5 × 1012 μC/cm2 after hydrogen plasma treatment. This allowed the device′s ION/IOFF ratio to reach eight levels, which is two levels higher than before, with significantly reduced leakage current (1-2 levels lower). XPS also revealed that the oxygen vacancy concentration in the HZO film decreased by nearly 50-60%, improving the charge trapping effect caused by oxygen vacancies. This resulted in wake-up free devices and extended endurance to over 1011 cycles. Furthermore, hydrogen plasma treatment reduced the pinning field, accelerated polarization switching, and minimized imprint effects. It also enhanced MLC operation from TLC to QLC, with a 46% improvement in variability.By inputting parameters such as test pulses, Gmax/Gmin, and the number of states into the MNIST system, recognition accuracy reached 91.1%. Regarding FeCAM, after hydrogen plasma treatment, the standard deviation of VOFF was reduced from 64mV to 38mV, and the maximum Hamming distance (MHD) was six times greater than before. Additionally, the Arrhenius equation fitting results showed that the FeCAM could retain data for ten years at 99.5°C.

關鍵字(中)

★ 鐵電記憶體
★ 內容可定址記憶體

關鍵字(英)

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 viii
表目錄 XII
第一章序論與文獻回顧 1
1.1 新興記憶體 1
1.1.1 馮·諾伊曼架構的侷限性 1
1.1.2 新興記憶體技術的發展 1
1.1.3 記憶體中的邏輯運算 2
1.1.4 記憶體與 LiM 技術的結合 2
1.2 鐵電材料的特性與發展 3
1.3 鐵電材料的極化機制 4
1.4 HZO 鐵電材料 5
1.4.1 鐵電材料的基本特性 6
1.4.2 HZO 的相變機制 6
1.4.3 HZO 在非揮發性存儲器中的應用 7
1.4.4 HZO 的兼容性和製造工藝優勢 7
1.4.5 HZO 的未來發展方向 8
1.5 鐵電記憶體 8
1.5.1 鐵電隨機存取記憶體 Ferroelectric Random Access Memory (FeRAM)8
1.5.2 鐵電場效電晶體 Ferroelectric Field Effect Transistor (FeFET）9
1.5.3 鐵電隧道結構 Ferroelectric Tunnel Junction (FTJ)10
1.6 鐵電材料面臨的問題與挑戰 11
1.6.1 去極化電場(Depolarization Field)11
1.6.2 尺寸效應(Size Effect) 13
1.6.3 印痕效應(Imprint Effect) 14
1.6.4 疲勞效應（Fatigue Effect）15
1.6.5 氧空缺(Oxygen Vacancy) 17
1.7 內容可定址記憶體 Content Addressable Memory(CAM) 18
1.7.1 CAM 的基本概念 18
1.7.2 CAM 的應用 19
1.7.3 CAM 的挑戰與優化 19
1.8 多位元內容可定址記憶體 Multi-bit Content Addressable Memory(Multi-bit
CAM) 20
1.8.1 Multi-bit CAM 的基本概念 20
1.8.2 Multi-bit CAM 的優勢 20
1.8.3 Multi-bit CAM 的挑戰 21
1.9 傳統 CAM 與 FeCAM 的比較 21
第二章 FeFET 及 FeCAM 電性量測 26
2.1 FeFET ID-VG量測 26
2.2 FeFET 切換速度量測 27
2.3 FeFET 耐久性量測 29
2.4 FeFET QSCV(quasi-static split-CV)量測 31
2.5 FeFET 讀取延遲量測 32
2.6 FeFET 介面缺陷密度(Dit)量測 33
2.7 FeFET 電導值量測 35
2.8 FeFET Multi-level 36
2.9 FeFET 擊穿電場(breakdown field)量測 37
2.10 FeFET 資料保留度量測(retention)量測 38
2.11 FeCAM Matching Line(ML)current 量測 40
第三章元件製備流程42
3.1 製備流程 42
第四章實驗結果與討論 46
4.1 FeFET 結果與討論 46
4.1.1 超晶格層狀推疊 HZO 46
4.1.2 介電層 Al2O3 46
4.1.3 遠程氫電漿處理對材料的影響47
4.1.4 ID-VG、漏電流與崩潰電場分析48
4.1.5 QSCV 分析49
4.1.6 電晶體的讀取延遲52
4.1.7 操作速度53
4.1.8 介面陷阱密度55
4.1.9 FeFET 的多位元操作56
4.1.10 FeFET 應用於類神經網路59
4.2 FeCAM 結果與討論63
4.2.1 FeCAM 的 Macthing Line (ML)電流 63
4.2.2 漢明距離(Hamming Distance，HD)65
第五章結論70
參考文獻71

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指導教授

唐英瓚(Ying-Tsan Tang)

審核日期

2024-12-3

推文