P型氮化銦鎵歐姆接觸層對氮化鋁銦鎵藍紫光雷射二極體特性之影響

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林明儀(Ming-Yi Lin) 查詢紙本館藏

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電機工程學系

論文名稱

P型氮化銦鎵歐姆接觸層對氮化鋁銦鎵藍紫光雷射二極體特性之影響
(Influence of P-type InGaN Ohmic Contact Layer on GaN-based Blue-violet Laser Diode)

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摘要(英)

We utilized the p-type InxGa1-xN/GaN SLs as p-type ohmic contact layer in our laser diode structure. The tunneling barrier width of the metal-semiconductor contact is reduced because of its high hole concentration and low resistivity near the surface, thereby allowing for a high hole tunneling probability through the barrier. By comparison, the effects of the damage during RIE etching were reduced by using the p-type InxGa1-xN/GaN SLs layer as p-type ohmic contact. Then, the electrical characteristic of laser diode was improved.

關鍵字(中)

★ 氮化鎵
★ 氮化銦鎵
★ 氮化鋁銦鎵
★ 雷射二極體
★ 歐姆接觸層

關鍵字(英)

★ GaN
★ InGaN
★ AlInGaN
★ Laser Diode
★ Ohmic Contact Layer

論文目次

目錄
第一章　導論……………………………………………………………1
第二章雷射二極體元件結構與製程…………………………………3
2.1　元件結構……………………………………………………...3
2.2　元件製程……………………………………………………...4
2.3 　P型歐姆接觸的製作與特性分析…………………………..12
2.3.1　序論…………………………………………………….12
2.3.2 受體活化環境的影響………………………………….13
2.3.3 表面處理的影響……………………………………….19
2.3.4 P型歐姆接觸金屬的選擇……………………………..22
第三章 P型氮化銦鎵歐姆接觸層…………………………………...23
3.1 序論………………………………………………………….23
3.2 試片結構及蝕刻環境……………………………………….30
3.3 電性分析…………………………………………………….32
第四章雷射二極體的特性量測及分析……………………………..39
4.1 電流電壓特性曲線………………………………………….39
4.2 電激發光譜………………………………………………….42
第五章結論…………………………………………………………..49
參考文獻………………………………………………………………..50

參考文獻

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指導教授

綦振瀛(Jen-Inn Chyi)

審核日期

2002-6-27

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