集極在上異質接面雙極性電晶體之設計與製程

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姓名

黃知澍(Chih-Shu Huang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

集極在上異質接面雙極性電晶體之設計與製程
(Design and Fabrication of Collector-up Hetrojunction Bipolar Transistor)

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摘要(中)

在本論文中，針對InGaP/GaAs 集極在上異質接面雙極性電晶體(collector-up HBT)的製程與特性作詳細的討論。為了在集極在上異質接面雙極性電晶體得到較佳的元件特性，適當的基射介面(base-emitter junction)處理是必要的，原因是集極在上結構之基射介面面積(ABE)通常遠大於基集介面面積(ABC)，此論文採用離子佈植方法來有效減少基射介面面積(ABE)；所以在小元件的光罩方面設計了定義四種不同離子佈植區域的光罩(EMII)，而此光罩區域邊緣與集極(collector)之間的間距稱之為DEB；在實驗中我們發現了DEB越小，元件的電流增益會增加，並且高頻表現也會變的更好，主要原因乃是基射面積(ABE)變小造成基極電流變小而使電流增益增加。另外從實驗中也得知隨著離子佈植量(ion implantation dose)的提高，元件的電流增益也會提高。最後從光罩的設計上與利用小訊號T-模型中，萃取出基極電阻(RB)、基集極電容(CBC)、與基射極電容(CBE)來探討了隨著DEB大小的不同及離子佈植面密度(ion implantation dose)的元件的高頻特性變化。所製作的集極在上異質接面雙極性電晶體(ABC = 2 ´ 4 ´ 12 mm2)之截止頻率(fT)可達12.2 GHz，最大震盪頻率(fmax)可達22 GHz。

摘要(英)

In this work, there will be a detail discussion on fabrication and characteristics of collector-up hetrojunction bipolar transistor. In order to obtain a better device performance, an appropriate handle between the base-emitter junction is necessary, because the base-emitter junction in collector-up HBT is usually bigger than the base-collector junction. In this work, ion implantation method is used to reduce the base-emitter junction in order to achieve a current gain larger than 1. The base resistance (RB) and the base-collector junction capacitance (CBC) had been abstracted by using the HBT small signal T-model. A collector-up hetrojunction bipolar transistor (ABC = 2 ´ 4 ´ 12 mm2) with cut off frequency (fT) 12.2 GHz and maximum oscillation frequency (fmax) 22 GHz had been fabricated.

關鍵字(中)

★ 異質接面雙極性電晶體
★ 集極在上

關鍵字(英)

★ Design and Fabrication
★ Collector-up Hetrojunction Bipolar Transistor

論文目次

第一章導論………………………………………………...…….….1
第二章集極在上異質接面雙極性電晶體之原理及製程………….5
2-1 集極在上異質接面雙極性電晶體的原理……………………..5
2-2 集極在上異質接面雙極性電晶體的製程…………………..…7
2-3 集極在上異質接面雙極性電晶體的離子佈植模擬設計….…25
第三章集極在上異質接面雙極性電晶體的特性分析及討論……29
3-1 直流與高頻特性的量測方法………………………………….30
3-2 不同的離子佈植量對元件的影響…………………………….32
3-3 不同的EMII光罩大小對元件特性的影響…………………...41
3-4 有無EMII光罩對元件直流與交流特性之實驗結果………...43
3-5 結果討論……………………………………………………….52
第四章元件參數的萃取與比較分析………………………………56
4-1 利用T-模型萃取小訊號參數基集電容(CBC)與基極電阻(RB) 56
4-2 集極在上與射極在上異質接面雙極性電晶體的小訊號參數CBC與RB的比較……………………………………………….60
4-3 集極在上異質接面雙極性電晶體CBE的比較……………….72
第五章結論…………………………………………………………76
參考文獻………………………………………………………………..78

參考文獻

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[5] Min-Chung Ho, “Base-Collector Capacitance Reduction of AlGaAs/GaAs Heterojunction Bipolar Transistors by Deep Ion Implantation” Ph.D. Dissertation, University of California, San Diego, 1995.
[6] 范振中, “磷化銦鎵/砷化鎵砷化鎵異質接面雙極性電晶體之研製及其集極調變對元件特性的營影響” 碩士論文,國立中央大學,民國89年。
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[9] Marko Sokolich , Senior Member , IEEE , Charles H. Fields , Member , IEEE , and Meena Madhav “Submicron AlInAs/InGaAs HBT with 160 GHz fT at 1mA Collector Current” IEEE Electron Device Letters, Vol. 22 , No. 1 , January 2001
[10] W. L. Chen , H. F. Chau , M. Tutt , M. C. Ho , T. S. Kim , and T. Henderson “High-Speed InGaP/GaAs HBT’s Using a Simple Collector Undercut Technique to Reduce Base-Collector Capacitance” IEEE Electron Device Letters , Vol. 18 , No. 17 , July 1997
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[12] Horio, K.; Nakatani, A. “Analysis of carrier-blocking effect in AlGaAs/GaAs HBT’s with insulating external collector and design criteria for collector-up HBT’’s Electron Devices” , IEEE Transactions on , Volume: 42 Issue: 11 , Nov. 1995
[13] David R. Pehlke and Dimitris Pavlidis , Senior Member , IEEE “Evaluation of the Factors Determining HBT High-Frequency Performance by Direct Analysis of S-Parameter Data IEEE Transactions on Microwave Theory and Techniques” , Vol. 40 , No. 12 , December 1992
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指導教授

辛裕明(Yue-Ming Hsin)

審核日期

2002-7-8

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