以電漿表面預處理法
在塑膠基板上製鍍抗反射膜

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姓名

王宣文(Shuan-Wen Wang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

以電漿表面預處理法在塑膠基板上製鍍抗反射膜
(Anti-Reflection Coating on Plastic Substrate Treated by Low Pressure Plasma )

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摘要(中)

近年來，塑膠基板在光學元件中的應用，日漸增加，凸顯了塑膠基板鍍膜的重要性，但是薄膜材料與塑膠基板間的附著性不佳，為目前主要待克服的問題點。
為了克服此問題，本研究選擇了電漿表面預處理法作為研究方向，來增加薄膜與基板的附著力。重點在探討以不同氣體與預處理功率及不同處理時間的情況下，對塑膠基板的表面粗糙度、化學鍵結與光學特性產生之變化。除此之外，也以預處理過的基板繼續鍍上Ta2O5單層膜，來探討基板與薄膜材料間中間層﹙interface layer﹚折射率不連續之現象，以及測試Ta2O5之附著性。
研究結果顯示，基板經電漿表面預處理後，在基板表面有中間層產生，且薄膜與基板的附著改善的程度，與電漿的功率及處理時間有關。功率高時，處理時間短，便可得到附著力增進的效果；功率低時，所需處理時間就比較長。
但是高功率電漿處理由於電漿反應較為劇烈，容易使基板表面之性質改變以及因高溫所累積的熱而產生形變，故改採長時間、低功率電漿處理，同時加上電極冷卻，以避免熱的因素。
本研究以模擬中間層的厚度與折射率設計膜層，並經優化修正後，已可鍍出於可見光區﹙420~670nm﹚反射率小於1%且附著佳的抗反射膜。

摘要(英)

The application of plastic substrates in optical components increased recently. The limitation in using plastic substrates for optical components was the poor adherence between thin films and substrates. This research focused on plasma surface treatment to enhance the adhesion.
The change of surface roughness, chemical bonding, substrate transmittance with different gas and pre-treatment power was investigated. In addition, we coated Ta2O5 single layer on substrates after pre-treatment to find out the phenomenon of the inhomogeneity as well as the adhesion degree between Ta2O5 and plastic substrate.
The results revealed that the improvement of adhesion related to plasma power and pre-treatment time. It took shorter time to reach good adhesion under high plasma power, while longer time under low plasma power. But, high power plasma treatment caused substrate overheated due to the volatile interaction between plasma and substrates. So we chose low power treatment with longer time as well as cathode cooling.
Finally, it is found that by refining the design of anti-reflection coating with an interface layer, an anti-reflection coating on plastic substrates with good adhesion can be made.

關鍵字(中)

★ 塑膠基板
★ 表面處理
★ 電漿
★ 抗反射膜

關鍵字(英)

★ plastic substrate
★ anti-reflection coating
★ plasma

論文目次

第一章前言........1
1-1 研究動機.......1
1-2 塑膠基板的種類 ...1
第二章基本理論... 4
2-1 電漿原理...... 4
2-1-1 射頻電漿預處理....... 5
2-2 濺鍍原理...... 6
2-2-1 直流濺鍍.... 6
2-2-2 磁控濺鍍.... 7
第三章量測儀器... 9
3-1 可見光-近紅外光光譜儀...9
3-2 原子力顯微鏡﹙Atomic Force Microscopy﹚..10
3-3 傅氏轉換紅外線光譜儀﹙Fourier Transform Infrared Spectroscopy﹚...12
第四章研究目標與實驗裝置及流程...13
4-1 研究目標...13
4-2 實驗裝置...13
4-3 實驗流程與方法 ...15
第五章結果與討論...17
5-1 低功率氬氣電漿預處理...17
5-1-1 基板穿透率變化...17
5-1-2基板處理後續鍍Ta2O5之穿透率變化...19
5-2 低功率氧氣電漿預處理...20
5-2-1 基板穿透率變化...20
5-2-2 基板處理後續鍍Ta2O5之穿透率變化...22
5-3 高功率氬氣電漿預處理...23
5-3-1 基板穿透率變化...23
5-3-2 基板處理後續鍍Ta2O5之穿透率變化...24
5-4 高功率氧氣電漿預處理...25
5-4-1 基板穿透率變化...25
5-4-2 基板處理後續鍍Ta2O5之穿透率變化...26
5-5 FTIR量測基板經由電漿處理後之變化...27
5-5-1 高功率氬氣電漿處理後之變化...27
5-5-2 高功率氧氣電漿預處理後之變化...29
5-6 AFM量測基板經由電漿處理後之表面粗糙度變化...30
5-6-1 高功率氬氣電漿處理後之變化...30
5-6-2 高功率氧氣電漿處理後之變化...32
5-7 附著力測試結果...34
5-8 抗反射膜之製鍍 ...35
5-8-1 四層抗反射膜 ...35
5-9 電漿預處理方式之改良...36
5-9-1 氦氣電漿預處理...36
5-9-2 以Quartz基板將電漿區與基板隔開...37
5-9-3 電極冷卻以氦氣與氬氣混合預處理 ...38
5-9-4 修正中間層後製鍍四層抗反射膜...39
第六章結論...42
第七章參考文獻...44

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指導教授

李正中(Cheng-Chung Lee)

審核日期

2005-7-20

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