利用微波電漿化學氣相沉積法成長多壁奈米碳管及其電性之研究

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劉展良(Zhan-Liang Liu) 查詢紙本館藏

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機械工程學系

論文名稱

利用微波電漿化學氣相沉積法成長多壁奈米碳管及其電性之研究

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摘要(中)

摘要
本論文主要利用IC圖案化製程，製作金屬內連線引洞(Vias)的結構再使用微波電漿化學氣相沉積(Microwave Plasma Chemical Vapor Deposition, MPCVD)，以Ta的良好特性當作催化劑Ni的阻障層及上下電極，成長多壁奈米碳管(Multi-wall Carbon Nanotube, MWCNT)來當做積體電路中內連線的材料。
本實驗配合掃描式電子顯微鏡(SEM)、拉曼光譜儀(Raman Spectroscopy)和I-V量測儀，探討在基板400oC下不同製程參數對奈米碳管的型態及電性的影響。結果發現在不同前處理電漿功率與不同前處理時間的參數中，當前處理電漿功率越大、前處理時間越長，奈米碳管的直徑會減小、密度會增大，結構的電阻值會降低。在不同成長電漿功率的參數中，奈米碳管的石墨化程度隨著成長電漿功率的增加而上升，結構的電阻值也因奈米碳管石墨化程度越好而下降。而在不同甲烷流量比例的參數中，15%的甲烷流量比例擁有最好的石墨化程度，以及最低的結構電阻值。實驗中還利用不同的溫度量測奈米碳管的電性，探討溫度對奈米碳管電性的影響，結果觀察到奈米碳管的電阻會隨著溫度下降而增加。最後以Ta和TiN做為阻障層探討奈米碳管的型態，發現利用Ta為阻障層，成長奈米碳管，其直徑會較TiN阻障層來的小。

關鍵字(中)

★ 內連線
★ 奈米碳管

關鍵字(英)

★ interconnect
★ carbon nanotube

論文目次

目錄
摘要 i
謝誌 ii
目錄 iii
表圖目錄 v
第一章緒論
1.1 前言 1
1.2 研究動機 3
第二章奈米碳管介紹
2.1 奈米碳管的起源 5
2.2 奈米碳管的晶體結構 7
2.3 奈米碳管的成長機制 10
2.4 奈米碳管的應用 11
2.5 奈米碳管的合成 14
第三章實驗方法與設備
3.1 實驗流程 18
3.2 二極體元件製作流程 20
3.3 拉曼分析結構 24
3.4 不同尺寸接觸孔洞的製作 24
3.5 實驗儀器簡介 26
第四章結果與討論
4.1 製程參數對奈米碳管型態的影響 30
4.1.1 前處理電漿功率對奈米碳管型態的影響 30
4.1.2 成長電漿功率對奈米碳管型態的影響 31
4.1.3 甲烷流量比例對奈米碳管型態的影響 32
4.1.4 前處理時間對奈米碳管型態的影響 33
4.2 製程參數對奈米碳管石墨化的影響 34
4.2.1 前處理電漿功率對奈米碳管石墨化的影響 34
4.2.2 成長電漿功率對奈米碳管石墨化的影響 34
4.2.3 甲烷流量比例對奈米碳管石墨化的影響 35
4.2.4 前處理時間對奈米碳管石墨化的影響 36
4.3 奈米碳管型態對電性的影響 37
4.4 奈米碳管石墨化程度對電性的影響 38
4.5 低溫下奈米碳管的電性 39
4.6 以TiN和Ta為阻障層奈米碳管型態的探討 42
4.7 比較銅內連線與奈米碳管內連線 44
第五章結論 69
參考文獻 70

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指導教授

黃豐元(Fuang-Yuan Huang)

審核日期

2005-7-4

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