參考文獻 |
[1]洪志明,“高速磷化銦異質接面雙載子電晶體之研製” 碩士論文, 國立中央大學, 民國92年。
[2]Jiann S. Yuan, SiGe, GaAs, and InP Heterojunction Bipolar Transistors. John Wiley and Sons, Inc. 1999.
[3]John D. Cressler, Guogu Niu, Silicon-Germanium Heterojunction Bipolar Transistors. Boston, MA: Artech House, 2003.
[4]蔡亭林,“矽鍺光電晶體與砷化鎵光電晶體之設計與特性分析” 碩士論文, 國立中央大學, 民國93年。
[5]Peter Ashburn, SiGe Heterojunction Bipolar Transistors. John Wiley and Sons, Inc. 2003.
[6]林上偉,“應用於單電子電晶體之矽/鍺量子點研製” 碩士論文, 國立中央大學, 民國93年。
[7]張佳彥,“砷化鎵雙載子電晶體之集極設計對功率效率之研究”碩 士論文, 國立中央大學, 民國92年。
[8]范振中,“磷化銦鎵/砷化鎵異質接面雙極性電晶體之研製及其集極調變對元件特性的影響” 碩士論文,國立中央大學,民國89年。
[9]梁虔碩,“AlGaAs/GaAs PIN/HBT 光檢測器轉阻放大器之積體化 光接收器” 碩士論文, 國立中央大學, 民國89年。
[10]Zhenqiang Ma, Saeed Mohammadi, Pallab Bhattacharya, Linda P. B. Katehi, Samuel A. Alterovitz, George E. Ponchak, “A High-Power and High-Gain X-Band Si/SiGe/Si heterojunction bipolar Transistor,” IEEE Transactions On Microwave Theory And Techniques., vol. 50, no. 4, pp. 1101-1108, Apr. 2002.
[11]Jae-Sung Rieh, Liang-Hung Lu, Linda P. B. Katehi, Pallab Bhattacharya, Edward T. Croke, George E. Ponchak, and Samuel A. Alterovitz, “X- and Ku-Band Amplifiers Based on Si/SiGe HBT’s and Micromachined Lumped Components,” IEEE Transactions On Microwave Theory And Techniques, vol. 46, no. 5, pp.685-694, May 1998.
[12]Jae-Sung Rieh, Liang-Hung Lu, Linda P. B. Katehi, Pallab Bhattacharya, Edward T. Croke, George E. Ponchak, and Samuel A. Alterovitz, “High Yield Reduced Process Tolerance Self-Aligned Double Mesa Process Technology for SiGe Power HBTs,” IEEE MTT-S Int. Microwave Symp.Dig, vol. 2, pp.963-966, Jun. 2004.
[13]Liang-Hung Lu , Saeed Mohammadi , Zhenqiang Ma , George E.Ponchak, Samuel A. Alterovitz , Karl M. Strohm , Johann-Friedrich Luy , Pallab Bhattacharya and Linda P. B. Katehi, “SiGe Power Heterojunction Bipolar Transistors(HBT’s) Fabricated by Fully Self-Aligned Double Mesa Technology,” IEEE MTT-S Int. Microwave Symp.Dig, vol. 3, pp.1709-1712, Jun. 2001.
[14]John D. Cressler, H. Comfort, Emmanuel F. Crabbe, Gary L. Patton, Johannes M. C. Stork, Jack Y. C. Sun and Bernard S. Meyerson, “On the Profile Design and Optimization of Epitaxial Si- and SiGe-Base Bipolar Technology for 77K Application-part I: Transistor DC Design Considerations,” IEEE Transaction On Electron Devices, vol.40, no. 3, pp.525-541, Mar. 1993.
[15]S.M. Sze, Modern Semiconductor Device Physics. John Wiley & Sons, 1998.
[16]水修銓,“異質接面雙載子電晶體之VBIC大訊號模型建立與驗證” 碩士論文, 國立中央大學, 民國93年。
[17]Peter E. Cottrell and Zhiping YU, “Velocity Saturation in the Collector of Si/GexSi1-x/Si HBT’s,” IEEE Electron Device Letters, vol. 11,no. 10, pp.431-433, Oct. 1990.
[18]Sandip Tiwari, “A New Effect at High Currents in Heterostructure Bipolar Transistors,” IEEE Electron Device Letters, vol. 9, no. 3, pp.142-144, Mar. 1988.
[19]Technology Modeling Associates, Inc., TMA MEDICI Two Dimensional Device Simulation Program, User’Manual.
[20]羅闐軒, “應用於混頻器之矽鍺異質接面雙載子電晶體之設計與模擬” 碩士論文, 國立清華大學, 民國88年。 |