參考文獻 |
[1] Semiconductor industry Association, International Technology Roadmap for Semiconductor, San Joes, CA:SIA (2004).
[2] S.Veeraraghavan and J.G.Fossum, “Short channel effects in SOI MOSFET’s,”IEEE Trans.Electron Dev., 36, 522 (1989).
[3] H.B.Bakoglu, Circuits Interconnections and Packaging for VLSI, Addison Wesley Publishing Company, Singapore, 38 (1990).
[4] B. Elattari, et al., “Impact of charging on breakdown in deep trench isolation structures [parasitic MOSFET example],”European Solid-State Device Research, 513 (2003).
[5] N. K. Jha, and V.R. Rao, “Understanding the NBTI degradation in halo-doped channel p-MOSFETs,”Physical and Failure Analysis Integrated Circuits, 311 (2004).
[6] J. Yuan, and J. C. S. Woo, “Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications, ” IEEE Electron Device Letters, 26, 87 (2005).
[7] T. Fuse, et al., “A 0.5-V power-supply scheme for low-power system LSIs using multi-V/sub th/ SOI CMOS technology, ” IEEE Journal of Solid-state Circuits, 38, 303 (2003).
[8] J.-O. Plouchart, et al., “A power-efficient 33 GHz 2:1 static frequency divider in 0.12-/spl mu/m SOI CMOS, ” Proc. IEEE radio Frequency Integrated Circuits (RFIC) Symposium, 329 (2003).
[9]吳憲昌,陳啟東,單電子電晶體的進展與應用,自然科學簡訊第十五卷第四期,115 (2003)。
[10] A.J.Auberton-Herve, Proc.-Electrochem. Soc., 90-6, 544 (1990).
[11] J.-P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 3rd Edition, Springer Science+Business Media, Inc., New York (2004).
[12] G. C.Messenger and M.S.Ash, The effect of Radiation on Electronic systems, Van Nostramd Rienhold Company, New York (1986).
[13] G. K. Celler and S. Cristoloveanu, “Frontiers of Silicon-on- Insulator,” J. Appl. Phys., 93, 4955 (2003).
[14]莊達人,「VLSI製造技術」,五版,高立圖書有限公司,臺北縣 (民國91年)。
[15] J. B. Kuo and K.-W. Su, CMOS VLSI Engineering: Silicon-on-Insulator (SOI), Kluwer Academic Publishers, Boston (1998).
[16] 陳威良,「電漿離子佈植製作SOI及佈植缺陷之研究」,國立清華大學,碩士論文 (民國90年)。
[17] 李隆盛,「非正統之金氧半導體場效電晶體」,電子與材料雜誌 14,80 (2002)。
[18] Toshiaki KURITA and Mitsuo TAKEMOT, “Design of low power-consumptionnLS’s,” OKI technical review 188, 68, 29 (2001).
[19] M. Valdinoci, et al., “Floating body effects in polysilicon thin-film transistors,”IEEE Trans. Electron Devices, 44, 2234 (1997).
[20] Krishnan, S. and Fossum, J. G,”Grasping SOI floating-body effects,” Circuits and Devices Magazine, IEEE, 14, 32 (1998).
[21] Y.-C. Tseng, et al.,”Local floating body effect in body-grounded SOI nMOSFETs,” Proc. IEEE International SOI conference, 6-9, 26 (1997).
[22] B. Maiti et al, ”PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology”, in IEDM Tech. Dig., 781 (1998).
[23] Zheng Taolei, Luo Jinsheng, and Zhang Xing,”On pure self-heating effect" of MOSFET in SOI,”Proc. Solid-State and Integrated-Circuit Technology, 1, 665 (2001).
[24] Sun Zimin, Liu Litian, and Li Zhijian,“Self-heating effect in SOI MOSFETs,”Proc. Solid-State and Integrated Circuit Technology, 572 (1998).
[25] R. J. T Bunyan, ”Self-heating effects in sub-micron SOI-MOSFETS,”IEE Colloquium on Sub-Micron VLSI Reliability, 4/1 (1992).
[26] E. Haralson, et al.,”Influence of self heating in a BiCMOS on SOI technology,”Proc. Solid-State Device Research, 337 (2004).
[27] Zenglang Xia, Yinbo Li, and Yuanfu Zhao,”The effect of self-heating on hot-carrier effects in deep submicron SOI/NMOS,”Proc. Microelectronics, 1, 221 (2000).
[28] C. K. Subramanian, and G.. W. Neudeck, “SOI processing by epitaxial lateral overgrowth,” Proc. IEEE International SOI conference, 132-133 (1991).
[29] K. Izumi, “Historical overview of SIMOX,” Vacuumk, 42, 333 (1991).
[30] A. O. Adan, et al., “SOI as a mainstream IC technology,” Proc. IEEE International SOI Conference, 9-12 (1998).
[31] Badih El-Kareh, Fundamentals of semiconductor processing technologies, Ch. 6 Ion-Implantation, 353.
[32] S. M. Sze, VLSI Technology, Ch. 7 Ion-Implantation, 327.
[33] J. Lindhard, M. Scharff, and H. Schiott, “Rang concepts and heavy ion ranges”, Mat. Fys. Med. Dan. Vid Selsk, 33(14), 1 (1964).
[34] M. J. P. Gopstaken, et al., “Effect of crystalline regrowth on dopanr profiles in preamorphized silicon,” Applied Surface Science, 231-232, 688 (2004).
[35] Lourdes Pelaz, et al., “Monte carlo modeling of amorhpization resulting from ion implantation in Si,” Computational Materials Science, 27,1 (2003).
[36] M. Sayed, et al., “Molecular dynamics simulations of implantation damage and recovery in semiconductors,” Nuclear Instrument and Methods in Physics Research B, 102, 218 (1995).
[37] Hua Li, Xin-Dong Peng, and Nai-Ben Ming, “Comparison among the growth mechanisms of stacking fault, twin lamella and screw dislocation: a Monte Carlo simulation,” Journal of Crystal Growth, 149, 241 (1995).
[38] Roger G. horn, “Surface forces and their action in ceramic materials,” J. Am. Ceram. Soc. 73(5), 1117(1990).
[39] Kai-Tak wan, Douglas T. Smith, and Brian R. Lawn, “Fracture and contact adhesion energies of Mica-Mica, Silica-Silica, and Mica-Silica interfaces in dry and moist atmospheres,” J. Am. Ceram. Soc., 75, 667 (1992).
[40] J. B. Lasky, S. R. Stiffler, F. R. white, and J. R. Abernathey, IEDM Tech. Dig., 648 (IEEE, New York, 1985).
[41] J. B. Lasky, “Wafer bonding for silicon-on-insulator technologies,” Appl. Phys. Lett., 48, 78 (1986).
[42] M. Shimbo, et al., “silicon-to-silicon direct bonding method,” J. Appl. Phys. 60(8), 2987 (1986).
[43] Q.-Y. Tong, X.-L. Xu, and H. Shen, “Diffusion and oxide viscous flow mechanism in SDB process and silicon wafer rapid thermal bonding,” Electron. Lett., 26, 697 (1990).
[44] K.-Y. Ahn, et al., ”Stability ofinterfacial oxide layers during silicon wafer bonding,” J. Appl. Phys., 65, 561 (1989).
[45] H. Takagi, et al., “Low-temperature direct bonding of silicon and silicon dioxide by surface activation method,” Sensors and Actuators A, 70, 164 (1998).
[46] T. A. Michalske and E. R. Fuller,“ Closure and repropagation of healed cracks in silicate glass”, J. Am. Ceram. Soc., 68, 586 (1985).
[47] L. R. Fisher and J. N. Israelachvili, “ Direct measurement of effect of meniscus forces on adhesion: A study of the applicability of macroscopic thermodynamics to microscopic liquid interface”, Colloids Surf., 3, 303 (1981).
[48] J. N. Israelachvili, P. McGuiggan, and R. Horn, “Basic physics of interactions between surfaces in dry, humid and aqueous environments”, Proceedings of 1st International Symposium on Semiconductor Wafer bonding: Science, Technology and Applications, 92-7, 33 (1992).
[49] W. D. Kingery, H. K. Bowen, and D. R. Uhlmann, Introduction to ceramics, John Weily & Sons. Inc., 1976.
[50] Q. Y. Tong, E. Schmidt, and U. Gosele, “Hydrophobic silicon wafer bonding”, Appl. Phys. Lett., 64, 625 (1994).
[51] C. H. Seager and D. S. Ginley, “Studies of the hydrogen passivation of silicon grain boundaries”, J. Appl. Phys., 52(2), 1050 (1981).
[52]D. S. Ginley and D. M. Haaland, “Observation of grain boundary hydrogen in polycrystalline silicon with Fourier transform infrared spectroscopy”, Appl. Phys. Lett., 39(3), 271 (1981).
[53] J. K. G. Panitz, D. J. Sharp and C. R. Hills, “Near-surface microstructural modifications in low energy hydrogen ion bombarded silicon”, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 3(1), 1 (1985).
[54] N. M. Johnson, et al., “Defects in single-crystal silicon induced by hydrogenation”, Phys. Rev. B, 35(8), 4166 (1987).
[55] S. Romani and J. H. Evans, “Platelet defects in hydrogen implanted silicon”, Nuclear Instruments and Methods in Physics Research Section B, 44(3), 313 (1990).
[56] G. F. Cerofolini, et al., “Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon”, Phys. Rev. B, 46(4), 2061 (1992).
[57] M. Gao, et al., “A transmission electron microscopy study of microstructural defects in proton implanted silicon”, J. Appl. Phys., 80(8), 4767 (1996).
[58] W. K. Chu, et al., “Distribution of irradiation damage in silicon bombarded with hydrogen”, Phys. Rev. B, 16(9), 3851 (1977).
[59] C. G. Van de Walle, et al., “Theory of hydrogen diffusion and reactions in crystalline silicon”, Phys. Rev. B, 39(15), 10791(1989).
[60] K. J. Chang and D. J. Chadi, “Hydrogen bonding and diffusion in crystalline silicon”, Phys. Rev. B, 40(17), 11644 (1989).
[61] T. Hara, et al., “H+ implantation in Si for the void cut SOI manufacturing”, Proc. Ion Implantation Technology International Conference, 45 (1996).
[62] Bo Chen, “Mechanisms of layer-transfer related to silicon-on-insulator structures”, New Jersey Institute of Technology, Ph.D. Dissertation (2004).
[63] I. Radu, “Layer transfer of semiconductors and complex oxides by helium and/or hydrogen implantation and wafer bonding”, Martin Luther University, Ph.D. Dissertation (2003).
[64] C. M. Varma, “Hydrogen-implant induced exfoliation of silicon and other crystals”, Appl. Phys. Lett., 71(24), 3519 (1997).
[65]T. Hochbauer, “On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage”, Marburg University, Ph.D. Dissertation, 2001.
[66] J. Grisolia, G. Ben, Assayag, A. Claverie, B. Aspar, C. Lagahe, and L. Laanab, “A transmission electron microscopy quantitative study ofthe growth kinetics of H platelets in Si” Appl. Phys. Lett., 76, 852 (2000).
[67] T.-H. Lee, “Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies”, Duke University, Ph.D. Dissertation (1998).
[68] L. Huang, “Layer transfer of semiconductor and insulator materials by wafer bonding and hydrogen implantation”, Duke University, Ph.D. Dissertation (1999).
[69] A. K. El-Senussi and J. P. H. Webber, “On the double cantilever beam technique for studying crack propagation”, J. Appl. Phys., 56(4), 885 (1984).
[70] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, Prentice-Hall Inc. (1992).
[71] Julian Blake, “SIMOX (Separation by Implantation of Oxygen)”, Encyclopedia of Physical Science and Technology, 14, 805 (2001).
[72] G.L. Sun, “Cool plasma activated surface in silicon direct bonding technology”, J.de Physique, 49(C4), 79 (1988).
[73] K. Izumi, M. Doken, and H. Ariyoshi, “CMOS devices fabricated on buried SiO2 layers formed by Oxygen implantation into silicon,” Electron. Lett., 14, 593 (1978).
[74] G. K.Celler, et al., “High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing,” Appl. Phys. Lett., 48(8), 532 (1986).
[75] D. Hill, P. Fraundorf, and G. Fraundorf, “The reduction of dislocations in oxygen implanted silicon-on-insulator layers by sequential implantation and annealing,” J. Appl. Phys., 63(10), 4933 (1988)
[76] F. Namavar, et al., Proc. IEEE SOS/SOI Technology Workshop, 117 (1989).
[77] J. Stoemenos, et al., “New conditions for synthesizing SOI structures by high dose oxygen implantation,” J. Crystal Growth, 73(3), 546 (1985).
[78] E. A. Mayell-Ondruz et al., “A model for the evolution of implanted oxygen profiles in silicon,” Thin Solid Films, 114(4), 357 (1984).
[79] P. L. F. Hemment, “Semiconductor on insulator and thin film transistor technology,” Proc. MRS Symposium, 53, 207 (1986).
[80] M. Bruel, “Silicon on insulator material technology,” Electron. Lett., 31, 1201 (1995).
[81] Christophe Maleville, and Carlos Mazure, “Smart-CutR technology: from 300 mm ultrathin SOI production to advanced engineered substrates”, Solid-State Electronics, 48, 1055 (2004).
[82] W. P. Maszara, “SOI material by wafer bonding: an overview,” Proc. IEEE International SOI Conference, 18 (1991).
[83] M. K. Weldon, et al., “ Mechanisms of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation,” Proc. IEEE International SOI conference, 124 (1997).
[84] C. Malleville, et al., “Wafer Bonding and H-Implantation Mechanisms Involved in The Smart-Cut Technology”, Material Science and Engineering B, 46, 14 (1997)
[85]S. J. Pearton, et al., “Hydrogen in crystalline semiconductors,” Appl. Phys. A, 43,153 (1987).
[86] N. M. Johnson, et al., “Defect in single-crystal silicon induced by hydrofenation,” Phys. Rev. B, 35, 4166 (1987).
[87] Goesele, et al., USP. 5877070, (1999).
[88] C. Qian and B. Terreault, “Blistering of silicon crystals by law KeV hydrogen and helium ions,” J. Appl. Phys. 90(10), 5152 (2001).
[89] C. Qian, B. Terreault, and S. C. Gujrathi, “Layer splitting in Si by H+He ion co-implantation: channeling effect limitation at low energy,” Nucl. Instrum. Metods Phys. Res. B., 175-177, 711 (2001).
[90] P. K. Chu and X. C. Zeng, “Hydrogen induced surface blistering of sample chuck materials in hydrogen plasma immersion ion implantation,” Journal of Vacuum Science & Technology A, 19(5), 2031 (2001).
[91] Z. N. Fan, et al., “ Surface hydrogen incorporation and profile broadening caused by sheath expansion in hydrogen plasma immersion ion implantation,” IEEE Transactions on Plasma Science, 28(2), 371 (2000).
[92] W. G. En, et al., “Genesis process: SA new SOI wafer fabrication method,” Proc. IEEE International SOI conference, 163 (1998).
[93] L. W. Wang, et al., “Damage in hydrogen plasma implanted silicon,” J. Appl. Phys., 90(4), 1735 (2001).
[94] P. K. Chu, “Contamination issues in hydrogen plasma immersion ion implantation of silicon – a brief review,” Surface & Coatings Technology, 156, 244 (2002).
[95] M. K. Weldon, et al., “Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation,” Appl. Phys. Lett., 73(25), 3721 (1998).
[96] Xinzhong Duo, et al., “Defect and strain in hydrogen and helium coimplanted single-crystal silicon,” J. Phys. D: Appl. Phys., 34, 5 (2001).
[97] R. Tonini, et al., “High-dose helium-implanted single-crystal silicon: Annealing behavior,” J. Appl. Phys., 29(3), 597 (1958).
[98]T. Hochbauer, et al., “Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers,”Nuclear Instruments and Methods in Physics Research B, 216, 257 (2004).
[99] T. -H. Lee, J. Lin, and J. Peng, “Nova-Cut Process: Fabrication of Silicon Insulator Materials”, Proc. IEEE International SOI Conference, 189 (2002).
[100] D. C. Thompson, et al., “Microwave-Cut silicon layer transfer,” Appl. Phys. Lett., 87(22), 224103 (2005).
[101] D. C. Thompson, et al., “Microwave Activation of Exfoliation in Ion?cut Silicon Layer Transfer,” Mater. Res. Soc. Symp. Proc., 994, 0994-F11-07 (2007).
[102] T. Ohmi, “Total Room Temperature Wet Cleaning for Si Substrate Surface,” J. Electrochem. Soc., 143, 2957 (1996).
[103] 小川洋輝、崛池靖浩著,顏誠廷譯,半導體潔淨技術,普林斯頓國際有限公司,臺北縣,民國九十二年。
[104] H. Xiao著,U半導體製程技術導論U,羅正忠和張鼎張譯,二版,臺灣培生教育出版,臺北市,民國九十三年。
[105] Q.-Y. Tong and U. Gosele, USemiconductor Wafer Bonding: Science and TechnologyU, John Wiley&Sons, Inc., New York, 1999.
[106] P.-H. Chen, et al., “The Characteristic Behavior of TMAH Water Solution forAnisotropic Etching on Both Silicon Substrate and SiOB2 Layer”, USensors andActuators A: PhysicalU, 93(2), 132 (2001).
[107] Takao Yonehara, Kiyofumi Sakaguchi, and Nobuhiko Sato, “Epitaxial layer transfer by bond and etch back of porous Si,” Appl. Phys. Lett., 64(16), 2108 (1994).
[108]W. P. Maszara, “Silicon-on-Insulator by Wafer Bonding: A Review”, J.
Electrochem. Soc., 138(1), 341 (1991).
[109]A. R. Lang, “Direct Observation of Individual Dislocations by X-ray
Diffraction”, J. Appl. Phys., 29(3), 597 (1958).
[110] R. A. Lemons and C. F. Quate, “Acoustic Microscope – Scanning Version”,
Appl. Phys. Lett., 24(4), 163 (1974).
[111] J.Lindhard,M.Scharff and H.E.Schiot,Mat. Fys. Medd. Dan.Vid.Selsk,33(14) (1963)。
[112] Q.-Y. Tong and U. Gosele, Semiconductor Wafer Bonding: Science and Technology, John Wiley&Sons, Inc., New York, 1999.
[113] J. T. S. Lin, J. Peng, and T.-H. Lee, 2002 IEEE International SOI conference, 189 (2002).
[114] D. C. Thompson, T. L. Alford, J. W. Mayer, T. Hchbauer, M. Nastasi, S. S. Lau, N. D. Theodore, K. Henttinen, L. Suni, and P. K. Chu, Appl. Phys. Lett., 87, 224103 (2005).
[115] M. Alexe and U. Gosele, Wafer Bonding - Application and Technology, 1st ed. Berlin, Germany: Springer-Verlag, 91 (2004).
[116] J. N. Lee, Y. W. Choi, B. J. Lee, and B. T. Ahn, J. Appl. Phys., 82, 2918 (1997)
[117] G. A. Samara, “Temperature and pressure dependences of the dielectric constants of semiconductors”, Physical Review B, 27(6), 3494 (1983).
[118] Takao Yonehara, Kiyofumi Sakaguchi, and Nobuhiko Sato, “Epitaxial layer transfer by bond and etch back of porous Si,” Appl. Phys. Lett., 64(16), 2108 (1994).
[119] L.-J. Huang, Ph. D. Dissertation, Duke University, 1999.
[120] C. -H. Huang, C. -C. Ho, S. -C. Jeng, and T. -H. Lee, “Low-Stress Silicon Layer Transfer onto Quartz by means of Enhanced Hydrogen Ion Capture within an Epitaxial Si (B/Ge) Buried Layer,” Electrochemical and Solid-State Letters, Accepted.
[121] James Ziegler, et al., Ion Implantation Science and Technology, Ion Implantation Technology Inc., 2008.
[122] Kris V. Srikrishnan, US Patent 5882987, 1999.
|