用頻域模擬法探討S參數及其應用

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姓名

王郁誠(Yu-Chang Wang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

用頻域模擬法探討S參數及其應用
(Frequency-domain Numerical Simulation for Finding Scattering Parameters)

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摘要(中)

本論文研究以傳輸線及電路模型為架構之模擬器，來獲得待測系統之 S 參數(S parameters)。測試區段之連接埠以傳輸線等效模型連接，在時域模擬環境下，主測試埠以正弦波進行輸入，並於其它連接埠傳輸線之末端匹配以等值之阻抗。藉由模擬器之運算可以取得主測試埠之反射波型與其它各連接埠之穿透波型模擬值。藉由此方法可以得到該測試區段之S 參數，包含反射係數與穿透係數。在頻域模擬環境下，我們以同樣的方法取得S參數；且主測試埠輸入不同頻率的電壓來得到不同的結果。在此論文的後續章節中，會對時域模擬與頻域模擬作比較並且在最後介紹S參數的應用。

摘要(英)

This thesis presents a time domain and frequency domain numerical simulation to obtain scattering parameters of the test section by using transmission line and equivalent-circuit model. The ports of the test section are connected with transmission lines. In time-domain, the sinusoidal wave is given into the input port for extracting the properties of the system with a matched load added at the terminal of each transmission line. With this simulation, the incident and reflected waveforms at the input port, and transmitted wave at the other ports can be obtained. From these relations of waves, the S parameters and the characteristics of the system including reflection and transmission coefficients can be obtained. In frequency domain, the S parameters are extracted in the same manner and different frequencies are given into the input port to obtain different results. The comparison between time-domain simulation and frequency-domain is presented in this thesis. At last, we will introduce the application of S parameters.

關鍵字(中)

★ S參數

關鍵字(英)

★ S parameter

論文目次

Contents
1. Introduction 1
2. S-parameter Extraction in Time-domain Simulation 3
2.1 Basic Transmission-line Theories 3
2.2 Time-scale and Space-scale Settings for Transmission-line Model 6
2.3 Traveling-wave Properties on Transmission Line 11
2.4 Analysis of Incident, Reflected and Composite Wave 13
2.5 S-parameter Extraction for Two-port Networks from Time-domain Simulation 15
3. S-parameter Extraction in Frequency-domain Simulation 19
3.1 S-parameter Extraction for Two-port Network from Frequency-domain Simulation 19
3.2 The Frequency Behavior of |S11|, |S21|, |S12|, |S22| 24
3.3 S-parameter Extraction for Three-port Network 25
3.4 Comparison between Time-domain and Frequency-domain Simulations 27
4. S-parameter Study for a BJT Circuit 29
4.1 Ebers-Moll Model for BJT Bias Circuit 29
4.2 S-parameter Extraction for the BJT Equivalent Circuit 32
4.3 Z- to S-parameter Transformation for Two-port Network 36
4.4 The Parameters of BJT Extraction from Z-parameter 38
5. Conclusion 42

參考文獻

[1] Guillermo Gonzalez, Ph. D., “Microwave Transistor Analysis and Design,” New Jersey, Prentice-HALL, 1984.
[2] David K. Cheng, “Field and Wave Electromagnetic, 2nd ed.,” Addison-Wesley, 1989.
[3] Hans W. Loeb, and Peter J. Ward, “The Use of Time-Domain Techniques for Microwave Transistor s-Parameter Measurements,” IEEE Transactions on Instrumentation and Measurement, vol. IM-26, no. 4, pp. 383, Dec. 1977.
[4] Chung-Ju Wu, “Time-domain Numerical Simulation for finding Scattering Parameters,” pp. 27-31, Jun. 2005.
[5] Matthew N. O. Sadiku, “Deficiencies in the Way Scattering Parameters Are Taught,” IEEE Transactions on Education, vol. 46, no. 3, pp. 399, Aug. 2003.
[6] H. CRAIG CASEY, JR., “Devices for integrated circuits,” pp. 449-454, John Wiley & Sons, 1999.

指導教授

蔡曜聰(Yao-Tsung Tsai)

審核日期

2007-7-4

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