高速可見光發光二極體

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姓名

陳正雄(Cheng-Hsiung Chen) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

高速可見光發光二極體
(High speed visible light light-emissing-diode(LED))

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摘要(中)

本論文針對用於短距離光纖通訊綠光波段(520nm)之高速發光二極體研究及製作。我們採用阻障層(barrier)有矽(Si)摻雜及無摻雜之複合結構來製作氮化鎵/氮化銦鎵(GaN/InGaN)多重量子井(MQW)試片，以及使用具有76μm直徑之電流侷限結構。由量測結果發現此結構具有330MHz極佳的電-光(electrical-to-optical) 3-dB頻寬，此調制速度被多重量子井的自發性複合生命時間(spontaneous recombination lifetime)所限制。一個合理的264μW耦光功率也被同時的實現在2mm直徑、0.5數值孔徑(numerical aperture)的塑膠光纖上。

摘要(英)

We demonstrate a high-speed GaN based Light-Emitting-Diode (LED) at a wavelength of around 520nm for the application to plastic optical fiber (POF) communication. By using a combination of n-type doping and undoped InxGa1-xN/GaN based multiple-quantum-wells (MQWs), and a 76μm in diameter current-confined aperture structure we can obtain an extremely high electrical-to-optical (E-O) 3-dB bandwidth (~330MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (~185μW) can be simultaneously achieved for a 2mm in diameter POF with a 0.5 numerical aperture (N.A.).

關鍵字(中)

★ 高速
★ 發光二極體

關鍵字(英)

★ LED
★ light-emissing-diode
★ high speed

論文目次

中文摘要 I
英文摘要 II
誌謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章導論 1
§1-1.光纖通訊的歷史 1
§1-2.光纖通訊架構與原理 2
§1-3.光纖通訊的優點 3
§1-4.塑膠光纖之發展趨勢 5
§1-5.塑膠光纖損耗及光源 8
§1-6.光纖通訊的應用 11
§1-7.結論及論文架構 14
第二章高速可見光發光二極體之原理介紹與討論 15
§2-1.發光二極體應用於光纖通訊介紹 15
§2-2.發光二極體工作原理 16
§2-3.應用於塑膠光纖通訊用發光二極體介紹 19
§2-4.高速發光二極體調制原理 21
§2-5.高速發光二極體調制限制 25
§2-6.高速發光二極體多量子井結構 28
第三章高速可見光發光二極體元件結構及製程 29
§3-1.高速可見光發光二極體元件試片結構 29
§3-2.氮化鎵發光二極體製作流程 30
§3-3.元件電流侷限大小的定義 40
第四章高速可見光發光二極體量測結果與討論 41
§4-1.高速可見光發光二極體之電特性量測 41
§4-2.高速可見光發光二極體之光特性量測 46
第五章結論與未來發展 52
§5-1.高速可見光發光二極體之結論與未來發展 52
參考資料 53
著作列表 57

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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2007-7-13

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