高速高功率單模態850nm波段面射型雷射

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姓名

楊立群(Li-chyung Yang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

高速高功率單模態850nm波段面射型雷射
(High speed,high power,single mode 850nm wavelength vertical cavity surface emitting lasers)

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摘要(中)

我們利用鋅擴散製作出850nm波段的單模態面射型雷射，而沒有利用一般縮小氧化孔徑之方法來產生單模態，這可以減小元件之熱效應。我們氧化孔徑為9μm的元件，頻寬能達到8GHz，有一個較小的微分電阻為47Ω，最大輸出功率為3mW，而在不同電流注入時，頻譜也都是維持單模態，且頻譜我們是在動態調制下量測。而我們所製作出來的單模面射型雷射在本質頻寬方面也比我們所製作出來的多模面射型雷射來的大(31GHz vs. 17GHz)。且我們的單模面射型雷射有比較窄的發散角(80 vs. 200) ，且單模的面射型雷射在調準限度(alignment tolerance)方面也有比較好的表現。

摘要(英)

By utilizing the Zn-diffusion technique, we demonstrate a single-mode 850nm vertical-cavity surface-emitting laser (VCSEL) without greatly downscaling the diameter of oxide-confined aperture to minimize the thermal effect. The demonstrated device with a 9 μm active diameter can attain an 8GHz bandwidth, a
small differential resistance (~47Ω47Ω), a 3mW maximum output power, and sustain the
single-mode characteristic under dynamic operation and whole range of bias current.
According to the dynamic measurement results, our single-mode device can
eliminate the damping-limited bandwidth,which was observed in our multi-mode
control without the Zn-diffusion aperture, and has a larger intrinsic bandwidth
(31GHz vs. 17GHz) due to the elimination of mode competition effect. The
narrower divergence angle (80 vs. 200) means that the device exhibits a larger
alignment tolerance and much lower coupling loss when used with the standard
multi-mode fiber than those of the control sample.

關鍵字(中)

★ 半導體雷射
★ 面射型雷射

關鍵字(英)

★ vertical-cavity surface-emitting laser
★ semiconductor laser

論文目次

摘要 I
Abstract II
致謝 III
目錄 V
圖目錄 VII
表目錄 XI
第一章序論 1
1-1 簡介 1
1-2 1-2 VCSEL 的磊晶結構 4
1-3 1-3 典型面射型雷射之介紹 6
1-4 1-3-1 氧化物侷限之面射型雷射 6
1-3-2 離子佈植方式之面射型雷射 7
1-4 單模850nm 波段VCSEL 應用於光連結 8
第二章理論 10
2-1 鋅擴散於DBR 10
2-2 VCSEL 的選擇性水氧化理論 14
2-3 發散角 17
第三章實驗 19
3-1 鋅擴散製程 19
3-2 水氣氧化 23
3-3 製作p-type 和n-type 電極以及金屬回火 26
3-4 平坦化及製作金屬接線 30
3-5 實驗設備 33
3-5-1 鋅擴散 33
3-5-2 水氧化 34
第四章結果與討論 35
4-1 量測系統 35
4-1-1 電流對電壓(I-V)的量測 35
4-1-2 輸出光功率對電流(L-I)之量測 35
4-1-3 發散角(Divergence Angle)之量測系統 36
4-1-4 近場投影 37
4-1-5 頻譜(Spectrum)之量測 37
4-1-6 頻寬(Bandwidth)之量測 38
4-3 氧化型VCSEL 量測結果 39
4-3-1 電流電壓I-V 曲線 39
4-3-2 輸出光功率對電流(L-I)曲線 40
4-3-3 二維(2-D)遠場模態 41
4-3-4 發散角 42
4-3-5 頻譜圖 43
4-3-6 頻寬之量測結果 45
4-4 氧化型合併鋅擴散VCSEL 量測結果 46
4-4-1 電流電壓I-V 曲線 46
4-4-2 輸出光功率對電流(L-I)曲線 47
4-4-3 二維(2-D)遠場模態 48
4-4-4 發散角 49
4-4-5 頻譜圖 50
4-4-6 頻寬(Bandwidth)之量測結果 51
4-5 參數模擬及不同結構比較 53
4-5-1 S11 參數模擬 53
4-5-2 K 參數(K parameter)模擬 55
4-5-3 元件之調準限度(Alignment tolerance)比較 56
第五章結論 58
參考資料 60

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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2007-7-23

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