摘要(英) |
With the computing speed of computers up to several GHz and above, the telecommunications bandwidth through the traditional copper wire will be inadequate. Thus, incorporating optical light as a transmitting media will substantially improve most current interconnect technology due to its high transmission speed. Silicon optical bench technology for optical interconnect applications provides specific characteristics of miniaturized sizes, a good heat spreading, and so on. In addition, the fabrication process can be achieved by employing a standard semiconductor process technology. Therefore, it provides assembly with highly precise alignment, and mass-production possibilities.
In this paper, a free-space optical interconnect technology, which can serve as a board on board and/or USB 3.0 applications, is realized by using a silicon-optical bench. The transceiver module on the silicon micro-optical bench includes of a monolithic 45∘micro-reflector, V-groove fiber array, high frequency transmission line for 2.5 GHz and bonding pads.
The designed silicon optical bench is possessed of a 45∘micro-reflector with 110 ?m. And the process tolerance can be controlled within 6%. Through the ray-tracing simulation methods, the coupling efficiency of transceiver and receiver part reaches up to -6 dB and -2 dB, respectively. |
參考文獻 |
1. Andrew C. Alduino, San Jose, CA(US); Mario J. Paniccia, Santa Clara, CA(US), “Method and apparatus providing an electrical-optical coupler”, (US patent NO. 7,306,378, USA, 2007)
2. Yasuhiko Aoki, Toshio Kato, Rogerio Jun Mizuno, Kenichi Iga, “Micro-optical bench for alignment-free optical coupling”, (OSA, Applied Physics,1999)
3. Kenji Tokoro et al., “Anisotropic Etching Properties of Silicon in KOH and TMAH Solutions”, IEEE International Symposium on Micromechatronics and Human Science,1998, p.65-69.
4. 張育誠,“微型光學讀取頭之元件”, (中央大學光電所碩士論文, 台灣, 2003)
5. I. Zubel, “Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH+IPA solutions”, Sensors and Actuators A: Physical, 84, p. 116-125,2000
6. I. Zubel, “Silicon anisotropic etching in alkaline solutions IV - The effect of organic and inorganic agents on silicon anisotropic etching process”, Sensors and Actuators A: Physical, 87, p. 163-171,2001
7. I. Zubel, “The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions”, Sensors and Actuators A: Physical, 93, p. 138-147,2001
8. J. M. Lai, W. H. Chieng, Y-C Huang, “Precision alignment of mask etching with respect to crystal orientation”, (J. Micromech. Microeng B, p.327-329,1998) |