二維量子點光子晶體雷射模擬與分析

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姓名

洪嘉濃(Jia-Nong Hung) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

二維量子點光子晶體雷射模擬與分析
(Two dimensional quantum dots photonic crystal laser simulation and analysis)

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摘要(中)

本論文主要在研究二維光子晶體共振腔對量子點雷射的特性。光子晶體共振腔因為本身有高品質因子和低模態體積的特性，使得光在腔體內具有很強量子增益機制及高Purcell效應，有助於改善雷射的特性，例如低臨界功率、高自發性輻射耦合係數和高微分量子效益。
在本研究中，為了模擬光子晶體共振腔內載子和光子的交互作用，我們從雷射速率方程式推導，並引用雷射量子臨界功率的定義和計算共振腔體的基本物理參數，建立一個二維量子點光子晶體雷射的分析模組。我們利用此模組分別模擬品質因子、模態體積和Purcell效應對雷射特性的影響。最後我們利用雷射動態方程式，估計 quasi-L2共振腔雷射的小訊號調變速率可達到約400 GHz，並進一步找出影響調變速率的參數，使光子晶體雷射調變速度提升至THz的等級。

摘要(英)

This thesis describes the characteristics of two dimensional photonic crystal cavity lasers. Photonic crystal cavities provide high quality factor (Q) and low mode volume (), which lead to enhanced light emission rate through Purcell effect. They can be used for improving the performance of lasers; for instance, lowering the threshold, increasing the spontaneous emission coupling efficiency and differential quantum efficiency.
In this work, we construct an analytic model for two dimensional quantum dot photonic crystal laser to simulate the interplay of carriers and photons in photonic crystal cavity based on rate equations. Then, we use the model to predict the spontaneous emission coupling efficiency as well as the effects of quality factor, mode volume and Purcell effect on the characteristics of photonic crystal cavity lasers. Small signal modulation speed as high as 400 GHz is predicted for a quasi-L2 cavity laser. Photon crystal cavity parameters for achieving modulation speeds up to the order of THz are also proposed and discussed.

關鍵字(中)

★ 高速調變速率
★ 量子點
★ 光子晶體雷射

關鍵字(英)

★ high speed modulation rate
★ quantum dot
★ photonic crystal laser

論文目次

中文摘要 Ⅰ
英文摘要 Ⅱ
誌謝 Ⅲ
目錄 V
圖目錄 VII
表目錄 IX
第一章導論 1
1-1 簡介 1
1-2 光子晶體雷射發展與簡介 3
1-3 研究動機 6
第二章基本原理 7
2-1 前言 7
2-2 雷射速率方程式推導 8
2-2 臨界功率定義 12
2-4 光子晶體雷射參數計算 15
2-5 結論 20
第三章光子晶體雷射特性模擬 22
3-1 研究動機 22
3-2 自發性輻射耦合效率模擬 23
3-3 品質因子與模態體積對雷射特性模擬 26
3-4 不同光子晶體共振腔模擬與比較 31
3-5 光子晶體雷射實驗和理論分析 35
3-6 結論 39
第四章光子晶體雷射調變速率模擬與分析 40
4-1 研究動機 40
4-2 小訊號調變速率計算與模擬 41
4-3 模擬結果分析 45
4-4 結論 48
第五章結論和未來展望 49
參考文獻 51
圖目錄
圖1-1.一維、二維以及三維光子晶體結構圖 3
圖1-2.(a)平面波展開法計算之光子能隙(b)有限時域差分法計算之光子穿透頻譜 4
圖1-3.(a)O.Painter等人於1999年提出之結構SEM圖(b)為其光子晶體薄片結構圖 4
圖2-1.穩態條件下，載子密度和光子密度隨激發速率的變化，由此變化可以模擬光子晶體雷射的特性. 11
圖2-2.傳統雷射入射功率對輸出功率關係圖(L-L curve)，傳統類型雷射具有明顯轉折臨界點，自發性輻射轉換成觸發性輻射造成。. 11
圖2-3.qL2腔體結構圖 16
圖2-4.qL2腔體結構立體圖 16
圖2-5.不同折射率材料反射與穿透的情形和全反射角 17
圖2-6.砷化鎵塊材(GaAs bulk)吸收係數 18
圖2-7.光子晶體雷射分析模型系統示意圖 21
圖3-1.不同自發性輻射耦合效率下，激發速率和載子密度的關係圖 22
圖3-2.不同自發性輻射耦合效率下，激發速率和光子密度的關係圖 24
圖3-3.不同自發性輻射耦合效率對於雷射臨界功率和微分量子效率的影響 24
圖3-4.qL2共振腔時間解析螢光光譜量測值(Time-resolved μ-PL) 25
圖3-5.品質因子變動對應的Purcell增率和自發性輻射生命週期 28
圖3-6.不同品質因子條件下，激發速率對載子密度的關係圖 28
圖3-7.不同品質因子條件下，激發速率對光子密度的關係圖 29
圖3-8.不同品質因子對於雷射臨界功率和臨界載子密度的影響 29
圖3-9.同一品質因子下，不同共振腔體激發速率對載子密度的關係圖 32
圖3-10.同一品質因子下，不同共振腔體激發速率對光子密度的關係圖 32
圖3-11.不同共振腔對臨界功率的關係圖 33
圖3-12.不同共振腔對微分量子效應的關係圖 33
圖3-13.(a)qL2共振腔輸入和輸出功率曲線與FWHM變化圖(b)低功率激發下(~0.3μW)的頻譜圖(Q~3000)(c)結構SEM圖 36
圖3-14.常見的半導體雷射材料和結構的增益常數和自發性輻射耦合效率 36
圖3-15.qL2輸入輸出曲線實驗數據與理論值吻合. 37
圖4-1.入射功率對雷射小訊號操作頻率的關係圖 46
圖4-2.自發性輻射耦合效率對雷射小訊號操作頻率的關係圖 46
圖4-3.品質因子對雷射小訊號操作頻率的關係圖 47
表目錄
表1.常用的光子晶體雷射參數及代表意義 9
表2.qL2、L3、modified H1共振腔之參數. 31
表3.qL2共振腔雷射參數 38

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指導教授

綦振瀛(Jen-Inn Chyi)

審核日期

2009-8-30

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