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姓名	王慶奇(Ching-Chi Wang)  查詢紙本館藏	畢業系所	電機工程學系
論文名稱	利用奈米圖案技術形成三維鍺量子點陣列的研製及其特性分析 (Formation and characterization of three-dimensional Ge QDs array on nano-patterned SiGe pillar structures)
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檔案	[Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   [檢視]  [下載] 本電子論文使用權限為同意立即開放。 已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。 請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。
摘要(中)	本論文旨在研發與現今矽製程技術相容的三維鍺量子點陣列系統之形成方法。利用選擇性氧化複晶矽鍺可形成鍺量子點的技術，佐以奈米矽鍺柱狀結構的設計與實作，得以有效地控制鍺量子點的尺寸、數量與位置，進而實作出三維鍺量子點/二氧化矽/氮化矽陣列。分別利用掃描式電子顯微鏡、穿透式電子顯微鏡、陰極激發光光譜與拉曼光譜等物性與光性檢測技術來多面向地分析探討量子點的尺寸、位置、顆數、晶格結構/形變與吸/放光能力。同時也對此三維鍺量子點系統未來應用於太陽能光伏特電池與熱電元件的構想提出初步的評估與探討，預期可提高其能量轉換效益，使元件的特性最佳化。
摘要(英)	The main theme of the thesis is to develop a COMS compatible process of three-dimensional (3D) germanium quantum dots (Ge QDs) array system. Using a simple method, “selectivity oxidation of polycrystalline SiGe” to form Ge QDs, combined with design and experiment of nano-patterned SiGe pillar structure to effectively control size, number and position of the Ge QDs. Then, we can fabricate a three-dimensional Ge QDs / silicon dioxide / silicon nitride arrays. We have studied the internal structure and optical properties of 3D Ge QDs array using scanning electron microscopy (SEM), transmission electron microscope (TEM), cathodoluminescence (CL) and Raman spectroscopy. In the future, we need to tailor 3D dense and size-tunable Ge QDs array, expect to boost the efficiency and optimize the device characteristics of solar cells and thermoelectric devices.
關鍵字(中)	★ 奈米圖案定義 ★ 鍺量子點 ★ 鍺量子點陣列	關鍵字(英)	★ germanium quantum dot ★ nanopatterning ★ germanium quantum dots array
論文目次	目 錄 中文摘要 i 英文摘要 ii 致謝 iii 目錄 v 圖目錄 vii 表目錄 xiv 第一章 簡介與研究動機 ……………………………… 01 1-1 何謂量子點及其發展性 ………………………………………… 01 1-2 多量子點系統的製備材料及其形成方式 ……………………… 02 1-3 研究動機 ………………………………………………………… 05 第二章 奈米定位製程技術之開發 …………………… 16 2-1 前言 ……………………………………………………………… 16 2-2 高密度柱子陣列之蝕刻製程開發 ……………………………… 16 2-2-1 簡介蝕刻製程參數 ………………………………………… 16 2-2-2 單晶矽之蝕刻條件建立 …………………………………… 20 2-2-3 不同鍺濃度的複晶矽鍺奈米串珠陣列之蝕刻條件建立 … 22 2-2-4 氮化矽與複晶矽鍺堆疊結構之蝕刻條件建立 …………… 25 2-3 高密度柱子陣列之微影系統開發 ……………………………… 26 第三章 三維鍺量子點陣列的形成與分析 …………… 50 3-1 簡介鍺量子點陣列的分析方法與儀器 ………………………… 50 3-2 三維鍺量子點陣列的形成與分析 ……………………………… 51 3-2-1 串珠柱狀結構之鍺量子點陣列的形成與分析 …………… 51 3-2-2 魚骨柱狀結構之鍺量子點陣列的形成與分析 …………… 53 3-2-3 魚骨柱子結構之鍺量子點陣列的形成與分析 …………… 54 3-2-4 三維鍺量子點陣列之製備與形成狀況比較 ……………… 60 第四章 鍺量子點在不同介電質與幾何結構內的形成與探討 ……………………………………………… 73 4-1 鍺量子點在不同介電質內的形成與分析 ……………………… 73 4-1-1 鍺量子點在氮化矽內的形成與分析 ……………………… 73 4-1-2 鍺量子點在二氧化矽內的形成與分析 …………………… 74 4-2 鍺量子點在不同幾何結構內的氧化機制探討 ………………… 75 第五章 結論與未來展望 ……………………………… 80 5-1 結論 ……………………………………………………………… 80 5-2 三維鍺量子陣列的發展性 ……………………………………… 80 參考文獻 ………………………………………………… 83
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指導教授	李佩雯(Pei-Wen Li)	審核日期	2011-7-22
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