參考文獻 |
[1] S. Ruffell, I. V. Mitchell, and P. J. Simpson, “Soild-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation”, J. Appl. Phys. 98, 083522 (2005)
[2] P. Grudowski et al. “An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with Enhanced Carbon Incorporation by Laser Spike Annealing”, IEEE SOI Conf. Proc. P.17 (2007)
[3] Zhibin Ren et al. “On Implementation of Embedded Phosphorus-doped SiC Stressors in SOI nMOSFETs”, Tech. Dig. - Int. Electron Devices Meet, P.172 (2008)
[4] R. Duffy et al. “Boron uphill diffusion during ultrashallow junction formation”, Appl. Phys. Lett. 82, 3647 (2003)
[5] Babak. Sadigh et al. “Large enhancement of boron solubility in silicon due to biaxial stress”, Appl. Phys. Lett. 80, 4738 (2002)
[6] T. Ghani et al. “A 90nm High Volume Manufacturing Logic Technology Featureing Novel 45nm Gate Length Strained Silicon CMOS Transistors”, IEDM Tech. Dig. P.978 (2003)
[7] E. R. Hsieh and Steve S. Chung, ”The procimity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors” Appl. Phys. Lett. 96, 093501 (2010)
[8] Shao-Ming Koh, Ganesh S. Samudra, and Yee-Chia Yeo, “Carrier transport in straine N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors”, Appl. Phys. Lett. 98, 03211 (2010)
[9] M. H. Yu et al. “The strained-SiGe Relaxation Induced Underlying Si Defects Following te Millisecond Annealing for the 32nm PMOSFETs”, ECS, 159, P.H243 (2012)
[10] S. P. Chappell, and R. C. Newman, “The selective trapping of self-interstitials by interstitial carbon impurities in enectron irradiated silicon”, Semicond. Sci. Technol. 2, P.691 (1987)
[11] K. C. Ku et al. “Effect of germanium and carbon coimplants on phosphorus diffusion in silicon”, Appl. Phys. Lett. 89, 112104 (2006)
[12] L. A. Edelman et al. “Effect of carbon codoping on boron diffusion in amorphous silicon” Appl. Phys. Lett. 93, 072107 (2008)
[13] H. J. Osten et al. “Substitutional versus interstitial carbon incorporation durig pseudomorphic growth of Si1-yCy on Si(100)”, J. Appl. Phys. 80, 6711 (1996)
[14] H. J. Osten et al. “Substitutional carbon incorporation in epitaxial Si1-yCy alloys on Si(100) grown by molecularbeam epitaxy”, Appl. Phys. Lett. 74, 836 (1999)
[15] S. Y. Park et al. “Carbon incorporation pathways and lattice sites in Si1-yCy alloys grown on Si(100) by molecular-beam epitaxy”, J. Appl. Phys. 91, 5716 (2002)
[16] T. O. Mitchell, J. L. Hoyt, and J. F. Gibbons, “Substitutional carbon incorporation in epitaxial Si1-yCy layers grown by chemical vapor deposition”, Appl. Phys. Lett. 71, 12 (1997)
[17] N. Cherkashin et al. “On the influence of elastic strain on the accommodation of carbon atoms into sustitutional sites in strained Si:C layers grown on Si substrates” Appl. Phys. Lett. 94, 141910 (2009)
[18] J. W. Strane et al. “Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy”, J. Appl. Phys. 79, 637 (1996)
[19] S. D. Kim, C. M. Park, and J. C. S. Woo, “Advanced source/drain engineering for box-shaped ultrashallow junction formation using laser annealing and pre-amorphization implantation in sub—100-nm SOI CMOS ”, IEEE Trans. Electron Devices, 49, 1748 (2002)
[20] Shao-Ming Koh et al. “Silicon-Carbon Formed Using Cluster-Carbon Implant and Laser-Induced Epitaxy for Application as Source/Drain Stressors in Strained n-Channel MOSFETs”, ECS, 156, P.H361 (2009)
[21] T. Gebel et al. “Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon”, Nucl. Instrum. Meth. B, 186, 287 (2002)
[22] Michael J. Aziz, Paul C. Sabin, and Guo-Quan Lu, “The activation strain tensor: Nonhydrostatic stress effects on crystal-growth kinetics” Phys. Rev. B 44, 9812 (1991)
[23] Yaocheng Liu et al. “Strained Channel MOSFETs with Embedded Silicon Carbon Formed by Soild Phase Epitaxy”, VLSI Symp. Tech. Dig, P.44-45 (2007) Implant
[24] Kah-Wee Ang et al. “Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions”, IEEE, VOL.54, NO.11 (2007)
[25] J. W. Strane et al. “Precipitation and relaxation in strained Si1-yCy/Si heterostructures”, J. Appl. Phys. 76, 3656 (1994)
[26] C. Guedj et al. “Precipitation of β-SiC in Si1-yCy alloy”, J. Appl. Phys. communications, 84, 4631 (1998)
[27] Yong Jeong KIM et al. “The Loss Kinetics of Substitutional Carbon in Si1-yCy Regrown by Solid Phase Epitaxy”, Jpn. J. Appl. Phys. 40, 773 (2001)
[28] P. Wener et al. “Investigation of CxSi defects in C implanted silicon by transmission electron microscopy”, Appl. Phys. Lett. 70, 252 (1997)
[29] A. R. Powell, F. K. LeGoues, and S. S. lyer, “Formation of β-SiC nanocrystals by the relaxation of Si1-yCy random alloy layers”, Appl. Phys. Lett. 94, 324 (1994)
[30] H. J. Osten et al. “Strain relaxation in tensile-strained Si1-yCy layers on Si (001)”, Semicond. Sci. Technol. 11, 1678 (1996)
[31] M. S. Goorsky et al. “Thermal stability of Si1-yCy /Si strained layer superlattices”, Appl. Phys. Lett. 60, 2758 (1992)
[32] G. G. Fischer et al. “Investigation of the high temperature behavior of strained Si1-yCy/Si heterostructures”, J. Appl. Phys. 77, 1934 (1994)
[33] W. J. Taylor, T. Y. Tan, and U. Gösele, “Carbon precipitation in silicon: Why is it so difficult?”, Appl. Phys. Lett. 62, 3336 (1993)
[34] P. Boucaud et al. “Photoluminescence of strained Si1-yCy alloys grown at low temperature”, Appl. Phys. Lett. 66, 70 (1995)
[35] Zhiyuan Ye et al. “A study of low energy phosphorus implantation and annealing in Si:C epitaxial films”, Semicond. Sci. Technol. 22, P.171 (2007)
[36] B. Yang et al. “Strain loss in epitaxial Si:C films induced by phosphorus diffusion”, ECS trans. 16, P.1021 (2008)
[37] The Stopping and Range of Ions in Matter (SRIM) simulation, http://www.srim.org/
[38] W. E. Beadle, J. C. C. Tsai, and R. D. Plummer, QUICK REFERENCE MANUAL FOR SILICON INTEGRATED CIRCUIT TECHNOLOGY, Bell Telephone Laboratories (1985)
[39] G. L. Olson and J. A. Roth, “KINETICS OF SOLID PHASE CRYSTALLIZATION IN AMORPHOUS SILICON”, Mater. Sci. Rep. 3, 1 (1988)
[40] W. Y. Woon et al. “Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth”, Appl. Phys. Lett. 97, 141906 (2010)
[41] R. C. Newman and J. B. Willis, “VIBRATIONAL ABSORPTION OF CARBON IN SILICON”, J. Phys. Chem. Solids 26, 373 (1965)
[42] L. V. Kulik et al. “The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures”, Appl. Phys. Lett. 72, 1972 (1998)
|